BSS123LT1G Datasheet PDF - ON Semiconductor

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BSS123LT1G
ON Semiconductor

Part Number BSS123LT1G
Description Power MOSFET
Page 5 Pages


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BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
NChannel SOT23
Features
AECQ101 Qualified and PPAP Capable BVSS123LT1G
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
DrainSource Voltage
VDSS 100 Vdc
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Adc
ID 0.17
IDM 0.68
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board
(Note 3) TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA
556 °C/W
Junction and Storage Temperature
TJ, Tstg 55 to +150 °C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR5 = 1.0  0.75  0.062 in.
http://onsemi.com
170 mAMPS
100 VOLTS
RDS(on) = 6 W
NChannel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
3 Drain
3
1
2
SOT23
CASE 318
STYLE 21
SA MG
G
12
Gate Source
SA = Device Code
M = Date Code
G = PbFree Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 6
1
Publication Order Number:
BSS123LT1/D
Free Datasheet http://www.datasheet4u.com/

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