BSL716SN Datasheet PDF - Infineon Technologies

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BSL716SN
Infineon Technologies

Part Number BSL716SN
Description MOSFET
Page 10 Pages


BSL716SN datasheet pdf
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Small-Signal-Transistor,75V
BSL716SN
DataSheet
Rev.2.0
Final
Industrial&Multimarket



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OptiMOSSmall-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic Level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• RoHS compliant
• Halogen-free according to IEC61249-2-21
BSL716SN
Product Summary
VDS
RDS(on),max
ID
VGS=10 V
VGS=4.5 V
75 V
0.15 Ω
0.18
2.5 A
TSOP6
65 4
1
23
Type
BSL716SN
Package
TSOP6
Tape and Reel Info
H6327: 3000 pcs/ reel
Marking
sPZ
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
dv /dt
T A=25 °C
T A=70 °C
T A=25 °C
I D=2.5 A, R GS=25 Ω
I D=2.5 A, V DS=50 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
Power dissipation1)
Operating and storage temperature
ESD Class
V GS
P tot T A=25 °C
T j, T stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Halogen Free
Yes
Packing
Non dry
Value
2.5
2.0
10.0
33
6
±20
2.0
-55 ... 150
0 (<250V)
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.0
page 1
2014-09-30



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Parameter
Thermal characteristics
Thermal resistance
junction - soldering point
Thermal resistance
junction - ambient
Symbol Conditions
BSL716SN
min.
Values
typ.
Unit
max.
R thJS
R thJA
minimal footprint
6 cm2 cooling area1)
-
-
-
- 50 K/W
- 230
- 62.5
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=0 V, I D=250 µA
V GS(th) V DS=Vgs V, I D=218 µA
75
0.8
I DSS
V DS=75 V, V GS=0 V,
T j=25 °C
-
V DS=75 V, V GS=0 V,
T j=150 °C
I GSS
RDS(on)
V GS=20 V, V DS=0 V
V GS=10 V, I D=2.5 A
V GS=4.5 V, I D=2.3 A
g fs
|V DS|>2|I D|R DS(on)max,
I D=2 A
-
-
-
-
- -V
1.4 1.80
- 0.02 μA
- 10
- 10 nA
120 150 mΩ
136 180
6.06 - S
1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical in still air. ( t < 5 sec)
Rev 2.0
page 2
2014-09-30



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Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSL716SN
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
V GS=0 V, V DS=25 V,
f =1 MHz
-
-
-
237 315 pF
41 55
19 29
t d(on)
- 4.2 6.3 ns
tr
V DD=37.5 V,
V GS=10 V, I D=2.5 A,
-
3.4 5.1
t d(off)
R G,ext=6 Ω
- 50.3 75.5
t f - 14.3 21.5
Q gs
Q gd V DD=37.5 V, I D=2.5 A,
Q g V GS=0 to 10 V
V plateau
-
-
-
-
0.6 0.8 nC
2.5 3.7
8.7 13.1
2.4 - V
IS
I S,pulse
V SD
T A=25 °C
V GS=0 V, I F=2.5 A,
T j=25 °C
t rr V R=37.5 V, I F=2.5 A,
Q rr di F/dt =200 A/µs
-
-
-
-
-
- 2.1 A
- 10.0
0.8 1.1 V
29 36 ns
58 73 nC
Rev 2.0
page 3
2014-09-30



BSL716SN datasheet pdf
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BSL716SN pdf
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Infineon Technologies
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