BSC520N15NS3G Datasheet PDF - INFINEON

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BSC520N15NS3G
INFINEON

Part Number BSC520N15NS3G
Description Power-Transistor
Page 10 Pages


BSC520N15NS3G datasheet pdf
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Type
OptiMOS™3 Power-Transistor
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant;
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
BSC520N15NS3 G
Product Summary
V DS
R DS(on),max
ID
150 V
52 m
21 A
PG-TDSON-8
Type
Package
Marking
BSC520N15NS3 G PG-TDSON-8 520N15NS
http://www.DataSheet4U.net/
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current3)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=18 A, R GS=25
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
21
14
84
60
±20
57
-55 ... 150
55/150/56
Unit
A
mJ
V
W
°C
Rev. 2.2
page 1
2009-11-04
datasheet pdf - http://www.DataSheet4U.net/



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Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
6 cm2 cooling area2)
BSC520N15NS3 G
min.
Values
typ.
Unit
max.
- - 2.2 K/W
- - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=35 µA
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
V DS=120 V, V GS=0 V,
T j=125 °C
I GSS
R DS(on)
V GS=20 V, V DS=0 Vhttp://www.DataSheet4U.net/
V GS=10 V, I D=18 A
V GS=8 V, I D=9 A
RG
g fs
|V DS|>2|I D|R DS(on)max,
I D=18 A
150
2
-
-
-
-
-
-
11
-
3
0.01
10
1
42
42
2.1
21
-V
4
1 µA
100
100 nA
52 m
52
-
-S
1)J-STD20 and JESD22
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) see figure 3
Rev. 2.2
page 2
2009-11-04
datasheet pdf - http://www.DataSheet4U.net/



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Parameter
Symbol Conditions
BSC520N15NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=75 V,
f =1 MHz
V DD=75 V, V GS=10 V,
I D=9 A, R G=1.6
-
-
-
-
-
-
-
670 890 pF
80 -
3.4 -
7 - ns
4-
10 -
3-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs - 3.5 4.6 nC
Q gd
Q sw
Qg
V DD=75 V, I D=9 A,
V GS=0 to 10 V
http://www.DataSheet4U.net/
- 1.5 -
-3-
- 8.7 12
V plateau
- 5.2 - V
Q oss
V DD=75 V, V GS=0 V
-
22 29 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
V SD
t rr
Q rr
T C=25 °C
V GS=0 V, I F=21 A,
T j=25 °C
V R=50 V, I F=9 A,
di F/dt =100 A/µs
- - 21 A
- - 84
- 0.9 1.2 V
- 66 - ns
- 226 - nC
4) See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2009-11-04
datasheet pdf - http://www.DataSheet4U.net/



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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS10 V
BSC520N15NS3 G
60 25
50
20
40
15
30
10
20
10 5
0
0 40 80 120
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
10 µs
1 µs
0
160 0
http://www.DataSheet4U.net/
40 80 120
T C [°C]
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
101
100
10-1
10-1
Rev. 2.2
100 µs
1 ms
DC
100 101 102
V DS [V]
0.5
100
0.2
0.1
0.05 0.02
0.01
10-1
single pulse
103
t p [s]
page 4
160
2009-11-04
datasheet pdf - http://www.DataSheet4U.net/



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