BSC077N12NS3G Datasheet PDF - Infineon Technologies

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BSC077N12NS3G
Infineon Technologies

Part Number BSC077N12NS3G
Description MOSFET
Page 13 Pages


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BSC077N12NS3G
MOSFET
OptiMOSTM3Power-Transistor,120V
Features
•N-channel,normallevel
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•150°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 120 V
RDS(on),max
7.7
m
ID 98 A
SuperSO8
8 7 65
56 78
1
23
4
4321
S1 8D
S2 7D
S3 6D
G4 5D
Type/OrderingCode
BSC077N12NS3 G
Package
PG-TDSON-8
Marking
077N12NS
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.8,2015-12-15



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OptiMOSTM3Power-Transistor,120V
BSC077N12NS3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2 Rev.2.8,2015-12-15



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OptiMOSTM3Power-Transistor,120V
BSC077N12NS3G
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ID
ID,pulse
EAS
VGS
Ptot
Tj,Tstg
Min.
-
-
-
-
-
-20
-
-55
Values
Typ. Max.
- 98
- 61
- 13.4
- 392
- 330
- 20
- 139
- 150
Unit Note/TestCondition
TC=25°C
A TC=100°C
TA=25°C,RthJA=45K/W1)
A TC=25°C
mJ ID=50A,RGS=25
V-
W TC=25°C
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
RthJC
Thermal resistance, junction - case,
top
RthJC
Thermal resistance, junction - ambient,
minimal footprint
RthJA
Thermal resistance, junction - ambient,
6 cm2 cooling area1)
RthJA
Values
Unit Note/TestCondition
Min. Typ. Max.
- 0.5 0.9 K/W -
- - 18 K/W -
- - 75 K/W -
- - 50 K/W -
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) see Diagram 3
Final Data Sheet
3 Rev.2.8,2015-12-15



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OptiMOSTM3Power-Transistor,120V
BSC077N12NS3G
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
120
2
-
-
-
-
-
40
Values
Typ. Max.
--
34
0.01 1
10 100
1 100
6.6 7.7
1 1.5
80 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=110µA
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mVGS=10V,ID=50A
-
S |VDS|>2|ID|RDS(on)max,ID=50A
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
4300 5700
550 730
28 49
15 -
8-
26 -
7-
Unit Note/TestCondition
pF VGS=0V,VDS=60V,f=1MHz
pF VGS=0V,VDS=60V,f=1MHz
pF VGS=0V,VDS=60V,f=1MHz
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=2.7
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=2.7
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=2.7
ns
VDD=60V,VGS=10V,ID=25A,
RG,ext=2.7
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
Qgd
Qsw
Qg
Vplateau
Qoss
Min.
-
-
-
-
-
-
Values
Typ. Max.
21 -
15 -
29 -
66 88
4.7 -
76 100
Unit Note/TestCondition
nC VDD=60V,ID=25A,VGS=0to10V
nC VDD=60V,ID=25A,VGS=0to10V
nC VDD=60V,ID=25A,VGS=0to10V
nC VDD=60V,ID=25A,VGS=0to10V
V VDD=60V,ID=25A,VGS=0to10V
nC VDD=60V,VGS=0V
1) Defined by design. Not subject to production test.
2) See Gate charge waveformsfor parameter definition.
Final Data Sheet
4
Rev.2.8,2015-12-15



BSC077N12NS3G datasheet pdf
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