| Part Number | BLV92 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | UHF power transistor |
| Description | N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES BL... |
| Features |
BLV92
• multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum wideband capability and high power gain • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic ca... |
| Published | Mar 23, 2005 |
| Datasheet |
 BLV92 File
|
| Part Number | BLV99SL |
| Manufacturer | NXP |
| Title | UHF power transistor |
| Description | NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver. |
| Features |
• Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations . |
| Datasheet |
BLV99SL File
|
| Part Number | BLV99 |
| Manufacturer | NXP |
| Title | UHF power transistor |
| Description | NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver. |
| Features |
• Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap. It is designed primarily for use as a driver stage in base stations . |
| Datasheet |
BLV99 File
|
| Part Number | BLV98CE |
| Manufacturer | NXP |
| Title | UHF power transistor |
| Description | BLV98CE NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB operation in radio transmitters fo. |
| Features |
• Internal input matching to achieve high power gain • Implanted ballasting resistors an for optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV98CE NPN silicon planar epitaxial transistor in an SOT-171 envelope, intended for common emitter, class-AB oper. |
| Datasheet |
BLV98CE File
|
| Part Number | BLV97CE |
| Manufacturer | NXP |
| Title | UHF power transistor |
| Description | BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for . |
| Features |
• Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in rad. |
| Datasheet |
BLV97CE File
|
| Part Number | BLV97 |
| Manufacturer | NXP |
| Title | UHF power transistor |
| Description | BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in radio transmitters for . |
| Features |
• Internal input matching to achieve high power gain • Ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability DESCRIPTION BLV97CE NPN silicon planar epitaxial transistor in a SOT171 envelope, intended for common emitter, class-AB operation in rad. |
| Datasheet |
BLV97 File
|
