BGA7M1N6 Datasheet PDF - Infineon


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BGA7M1N6
Infineon

Part Number BGA7M1N6
Description Single-Band LTE LNA
Page 27 Pages

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BGA7M1N6
Single-Band LTE LNA
Single Band LTE LNA BGA7M1N6
Supporting Band-1 (2110-2170 MHz)
Using 0201 Components
Application Note AN350
Revision: Rev. 1.0
2013-11-20
RF and Protection Devices



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BGA7M1N6
Single-Band LTE LNA for Band-1 (2110-2170 MHz)
Application Note AN350
Revision History: 2013-11-20
Previous Revision:
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by
AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum.
COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™
of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium.
HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™
of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc.
MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS
Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of
Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems
Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc.
SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software
Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc.
TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™
of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™
of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2011-11-11
Application Note AN350, Rev. 1.0
2 / 27
2013-11-20



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BGA7M1N6
Single-Band LTE LNA for Band-1 (2110-2170 MHz)
Introduction
Table of Content
1 Introduction ........................................................................................................................................4
1.1 Introduction About 3G and 4G .............................................................................................................4
1.2 Applications ..........................................................................................................................................6
1.3 Infineon LNAs for 3G, 4G LTE and LTE-A Applications ......................................................................7
2 BGA7M1N6 Overview.......................................................................................................................10
2.1 Features .............................................................................................................................................10
2.2 Description .........................................................................................................................................10
3 Application Circuit and Performance Overview............................................................................13
3.1 Summary of Measurement Results....................................................................................................13
3.2 BGA7M1N6 as LTE LNA for Band-1 (2110-2170 MHz).....................................................................15
3.3 Schematics and Bill-of-Materials........................................................................................................16
4 Measurement Graphs ......................................................................................................................17
5 Evaluation Board and Layout Information ....................................................................................25
6 Authors..............................................................................................................................................26
7 Remark ..............................................................................................................................................26
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Figure 24
Example of Application Diagram of RF Front-End for 3G and 4G Systems. .......................................6
BGA7M1N6 in TSNP-6-2 ...................................................................................................................10
Equivalent Circuit of BGA7M1N6 .......................................................................................................11
Package and Pin Connections of BGA7M1N6...................................................................................11
Footprint Recommendation of BGA7M1N6 .......................................................................................12
Schematics of the BGA7M1N6 Application Circuit ............................................................................16
Insertion Power Gain (Narrowband) of the BGA7M1N6 for Band-1 Applications..............................17
Insertion Power Gain (Wideband) of the BGA7M1N6 for Band-1 Applications .................................17
Noise Figure of the BGA7M1N6 for Band-1 Applications ..................................................................18
Input Matching of the BGA7M1N6 for Band-1 Applications ...............................................................18
Input Matching (Smith Chart) of the BGA7M1N6 for Band-1 Applications ........................................19
Output Matching of the BGA7M1N6 for Band-1 Applications ............................................................19
Output Matching (Smith Chart) of the BGA7M1N6 for Band-1 Applications......................................20
Reverse Isolation of the BGA7M1N6 for Band-1 Applications...........................................................20
Stability K-factor of the BGA7M1N6 for Band-1 Applications ............................................................21
Stability Mu1-factor of the BGA7M1N6 for Band-1 Applications........................................................21
Stability Mu2-factor of the BGA7M1N6 for Band-1 Applications........................................................22
Input 1dB Compression Point of the BGA7M1N6 for Band-1 Applications with Vcc=1.8 V ..............22
Input 1dB Compression Point of the BGA7M1N6 for Band-1 Applications with Vcc=2.8 V ..............23
Input 3rd Intercept Point of the BGA7M1N6 for Band-1 Applications with Vcc=1.8 V ........................23
Input 3rd Intercept Point of the BGA7M1N6 for Band-1 Applications with Vcc=2.8 V ........................24
Picture of Evaluation Board (overview) ..............................................................................................25
Picture of Evaluation Board (detailed view) .......................................................................................25
PCB Layer Stack ................................................................................................................................25
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
LTE Band Assignment .........................................................................................................................4
Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications .............................................8
Infineon Product Portfolio of LNAs for 3G and 4G Applications ..........................................................9
Pin Assignment of BGA7M1N6 ..........................................................................................................12
Electrical Characteristics at Room Temperature (TA = 25 °C) for ......................................................13
Electrical Characteristics at Room Temperature(TA = 25 °C) for......................................................14
Bill-of-Materials...................................................................................................................................16
Application Note AN350, Rev. 1.0
3 / 27
2013-11-20



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BGA7M1N6
Single-Band LTE LNA for Band-1 (2110-2170 MHz)
Introduction
1 Introduction
1.1 Introduction About 3G and 4G
The mobile technologies for smartphones have seen tremendous growth in recent years. The
data rate required from mobile devices has increased significantly over the evolution modern
mobile technologies, starting from the first 3G/3.5G technologies (UMTS & WCDMA, HSPA &
HSPA+) to the recently 4G LTE-Advanced (LTE-A). LTE-A can support data rates of up to 1
Gbps.
Advanced technologies such as diversity Multiple Input Multiple Output (MIMO) and Carrier
Aggregation (CA) are adopted to achieve such higher data rate requirements. MIMO
technology, commonly referred as the diversity path in smartphones, has attracted attention
for the significant increasement in data throughput and link range without additional
bandwidth or increased transmit power. The technology supports scalable channel
bandwidth, between 1.4 and 20 MHz. The ability of 4G LTE to support bandwidths up to 20
MHz and to have more spectral efficiency by using high order modulation methods like QAM-
64 is of particular importance as the demand for higher wireless data speeds continues to
grow fast. Carrier aggregation used in LTE-Advanced combines up to 5 carriers and widens
bandwidths up to 100 MHz to increase the user rates, across FDD and TDD.
Countries all over the world have released various frequencies bands for the 4G
applications.Table 1 shows the band assignment for the LTE bands worldwide.
Table 1
Band No.
1
2
3
4
5
6
7
8
9
LTE Band Assignment
Uplink Frequency Range
1920-1980 MHz
1850-1910 MHz
1710-1785 MHz
1710-1755 MHz
824-849 MHz
830-840 MHz
2500-2570 MHz
880-915 MHz
1749.9-1784.9 MHz
Application Note AN350, Rev. 1.0
Downlink Frequency Range
2110-2170 MHz
1930-1990 MHz
1805-1880 MHz
2110-2155 MHz
869-894 MHz
875-885 MHz
2620-2690 MHz
925-960 MHz
1844.9-1879.9 MHz
4 / 27
Comment
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2013-11-20




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