BGA7L1N6 Datasheet PDF - Infineon


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BGA7L1N6
Infineon

Part Number BGA7L1N6
Description Single Band LTE LNA
Page 27 Pages

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BGA7L1N6
Single Band LTE LNA
Low Noise Amplifier for LTE Band 8
Application (925 - 960 MHz) using
0201 Components
Application Note AN364
Revision: Rev. 1.0
2014-12-18
RF and Protection Devices



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Application Note AN364
Revision History: 2014-12-18
Previous Revision:
Page
Subjects (major changes since last revision)
BGA7L1N6
Single Band LTE LNA B8
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™,
EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™,
OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-
SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™,
SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. ANSI™ of American National
Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc.
CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa
Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve
Incorporated. MCS™ of Intel Corp. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared
Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION.
MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of
Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™ of Red
Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO
YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO
KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence
Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND
RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last Trademarks Update 2014-07-17
Application Note AN364, Rev. 1.0
2 / 27
2014-12-18



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BGA7L1N6
Single Band LTE LNA B8
Introduction
Table of Content
1 Introduction ........................................................................................................................................5
1.1 About 3G and 4G Applications.............................................................................................................5
1.2 Applications ..........................................................................................................................................7
1.3 Infineon LNAs for 3G, 4G LTE and LTE-A Applications ......................................................................8
2 BGA7L1N6 Overview .......................................................................................................................11
2.1 Features .............................................................................................................................................11
2.2 Description .........................................................................................................................................11
3 Application Circuit and Performance Overview............................................................................13
3.1 Summary of Measurement Results....................................................................................................13
3.2 BGA7L1N6 as LTE LNA for Band-8 (925-960 MHz)..........................................................................15
3.3 Schematics and Bill-of-Materials........................................................................................................16
4 Measurement Graphs ......................................................................................................................17
5 Evaluation Board and Layout Information ....................................................................................25
6 Authors..............................................................................................................................................26
7 Remark ..............................................................................................................................................26
8 Reference ..........................................................................................................................................26
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Example of Application Diagram of RF front-end for 3G and 4G systems. .........................................7
BGA7L1N6 in TSNP-6-2 ....................................................................................................................11
Equivalent Circuit of BGA7L1N6 ........................................................................................................12
Package and pin connections of BGA7L1N6 .....................................................................................12
Schematics of the BGA7L1N6 Application Circuit .............................................................................16
Insertion Power Gain (Narrowband) of the BGA7L1N6 for LTE Band-8 Application ........................17
Insertion Power Gain (Wideband) of the BGA7L1N6 for LTE Band-8 Application ...........................17
Noise Figure of the BGA7L1N6 for LTE Band-8 Application .............................................................18
Input Matching of the BGA7L1N6 for LTE Band-8 Application ..........................................................18
Input Matching (Smith Chart) of the BGA7L1N6 for LTE Band-8 Application....................................19
Output Matching of the BGA7L1N6 for LTE Band-8 Application .......................................................19
Output Matching (Smith Chart) of the BGA7L1N6 for LTE Band-8 Application.................................20
Reverse Isolation of the BGA7L1N6 for LTE Band-8 Application......................................................20
Stability K-factor of the BGA7L1N6 for LTE Band-8 Application .......................................................21
Stability Mu1-factor of the BGA7L1N6 for LTE Band-8 Application...................................................21
Stability Mu2-factor of the BGA7L1N6 for LTE Band-8 Application...................................................22
Input 1dB compression point of the BGA7L1N6 for LTE Band-8 Application at Vcc=1.8V ...............22
Input 1dB compression point of the BGA7L1N6 for LTE Band-8 Application at Vcc=2.8V ...............23
Input 3rd interception point of the BGA7L1N6 for LTE Band-8 Application at Vcc=1.8V....................23
Input 3rd interception point of the BGA7L1N6 for LTE Band-8 Application at Vcc=2.8V....................24
Photo Picture of Evaluation Board (overview) ...................................................................................25
Photo Picture of Evaluation Board (detailed view) .............................................................................25
PCB layer stack..................................................................................................................................25
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
LTE Band Assignment .........................................................................................................................5
Infineon Product Portfolio of LNAs for 4G LTE and LTE-A Applications .............................................9
Infineon Product Portfolio of LNAs for 3G and 4G Applications ........................................................10
Pin Assignment of BGA7L1N6 ...........................................................................................................12
Electrical Characteristics at room temperature (TA = 25 °C) for.......................................................13
Electrical Characteristics at room temperature (TA = 25 °C) for.......................................................14
Application Note AN364, Rev. 1.0
3 / 27
2014-12-18



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BGA7L1N6
Single Band LTE LNA B8
Introduction
Table 7 Bill-of-Materials...................................................................................................................................16
Application Note AN364, Rev. 1.0
4 / 27
2014-12-18




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