BGA622L7 Datasheet PDF - Infineon


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BGA622L7
Infineon

Part Number BGA622L7
Description Silicon Germanium Wide Band Low Noise Amplifier
Page 10 Pages

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Data Sheet, Rev. 2.2, April 2008
BGA622L7
Silicon Germanium Wide Band Low Noise
Amplifier with 2 kV ESD Protection
Small Signal Discretes



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Edition 2008-04-14
Published by Infineon Technologies AG,
81726 München, Germany
© Infineon Technologies AG 2008.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.



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BGA622L7
BGA622L7, Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
Revision History: 2008-04-14, Rev. 2.2
Previous Version: 2006-05-19
Page
Subjects (major changes since last revision)
All Document layout change
Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.
Data Sheet
3 Rev. 2.2, 2008-04-14



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BGA622L7
Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Protection
1 Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD
Protection
Feature
• High gain
|S21|2 = 17.5 dB at 1.575 GHz
|S21|2 = 16.8 dB at 1.9 GHz
|S21|2 = 16.2 dB at 2.14 GHz
• Low noise figure, NF = 0.95 dB at 1.575 GHz
• Operating frequency range 0.5 - 6 GHz
• Typical supply voltage: 2.75 V
• On/Off-Switch
• Output-match on chip, input pre-matched
• Low external part count
• Tiny TSLP-7-1 leadless package
• 70 GHz fT - Silicon Germanium technology
• 2 kV HBM ESD protection (Pin-to-Pin)
• Pb-free (RoHS compliant) package
65
4
7
12 3
TSLP-7-1
Applications
• LNA for GSM, GPS, DCS, PCS, UMTS, Bluethooth, ISM and WLAN
9FF
Figure 1 Pin connection
,Q
2XW
2Q2II
N2KP
*1'
%*$/B3LQBFRQQHFWLRQYVG
Description
The BGA622L7 is a wide band low noise amplifier, based on Infineon Technologies’ Silicon Germanium
Technology B7HF. The out-pin is simultaneously used for RF out and On/Off switch. This functionality can be
accessed using a RF-Choke at the Out pin, where a DC level of 0 V or an open switches the device on and a DC
level of VCC switches off, it provides an insertion loss of 26 dB together with a high IIP3 up to 24 dBm at GPS
frequencies.
Type
BGA622L7
Package
TSLP-7-1
Marking
BX
Note: ESD: Electrostatic discharge sensitive device, observe handling precaution
Data Sheet
4 Rev. 2.2, 2008-04-14




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