| Part Number | BF996S |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | N-channel dual-gate MOS-FET |
| Description | Depletion type field-effect transistor in a plastic SOT143 microminiature package with interconnected source and substrate. 4 3 g2 g1 d DESCRI... |
| Features |
• Protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. APPLICATIONS • RF applications such as: – UHF television tuners – Professional communication equipment. PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 Top view Marking c... |
| Published | Mar 23, 2005 |
| Datasheet |
 BF996S File
|
| Part Number | BF996S |
| Manufacturer | Vishay Telefunken |
| Title | N.Channel Dual Gate MOS-Fieldeffect Tetrode |
| Description | BF996S Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for hand. |
| Features |
D Integrated gate protection diodes D Low noise figure D Low feedback capacitance
2 1
D High cross modulation performance D Low input capacitance D High AGC-range
G2 G1 D
94 9279
13 579
3
4
12623
BF996S Marking: MH Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1
S
Absolute Maxim. |
| Datasheet |
BF996S File
|
| Part Number | BF996S |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon N Channel MOSFET Tetrode |
| Description | Silicon N Channel MOSFET Tetrode q q q BF 996 S For input stages in UHF TV tuners High transconductance Low noise figure Type BF 996 S Marking. |
| Features |
urce leakage current ± VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ± VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V Gate 1 source pinch-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 15 V, VG1S = 0, ID = 20 µA V(BR) DS
± ±. |
| Datasheet |
BF996S File
|
