BF888 Datasheet PDF - Infineon

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BF888
Infineon

Part Number BF888
Description High Performance Bipolar NPN RF Transistor
Page 5 Pages


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BF888
High Performance Bipolar NPN RF Transistor
High transducer gain of typ. 14 dB @ 25 mA,6 GHz
Low minimum noise figure of typ. 0.85 dB @ 6GHz
High output compression of typ. 11 dBm @ 25 mA
3
4
2
1
Pb-free (RoHS compliant) package
For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF888
Marking
Pin Configuration
RYs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
VCEO
TA = 25 °C
TA = 55 °C
Collector-emitter voltage
VCES
Collector-base voltage
VCBO
Emitter-base voltage
VEBO
Collector current
IC
Base current
Total power dissipation1)
IB
Ptot
TS 89 °C
Junction temperature
TJ
Ambient temperature
TA
Storage temperature
TStg
1Ts is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Value
4.0
3.5
13
13
1.2
30
3
160
150
-55 ... 150
-55 ... 150
Unit
V
mA
mW
°C
Value
380
Unit
K/W
2010-04-06
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BF888
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
DC current gain
IC = 25 V, VCE = 3 V, pulse measured
V(BR)CEO 4 4.7 - V
ICES
- 1 - nA
ICBO
-1-
IEBO
- 10 -
hFE - 250 - -
1For calculation of RthJA please refer to Application Note Thermal Resistance
2010-04-06
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BF888
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
IC = 25 mA, VCE = 3 V, f = 2 GHz
Collector-base capacitance
Ccb
VCB = 3 V, f=1 MHz, VBE = 0, emitter grounded
Collector emitter capacitance
Cce
VCE = 3 V, f = 1 MHz, VBE = 0, base grounded
Emitter-base capacitance
Ceb
VEB = 0.5 V, f=1 MHz, VCB=0, collector grounded
- 47 -
- 0.08 -
- 0.35 -
- 0.45 -
Noise figure
F
IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
- 0.5 -
IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
- 0.85 -
Unit
GHz
pF
dB
Power gain
IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gms
- 27 - dB
Power gain, maximum available1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 6 GHz
Gma
- 17 - dB
Transducer gain
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
f = 6 GHz
|S21e|2
dB
- 24.5 -
- 14 -
Third order intercept point at output2)
VCE = 3 V, IC = 25 mA, f = 1.8 GHz,
ZS = ZL = 50
1dB Compression point
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 ,
f = 1.8 GHz
IP3 - 25 - dBm
P-1dB
- 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
2010-04-06
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Package SOT343
Package Outline
2 ±0.2
1.3
43
0.3
+0.1
-0.05
4x
0.1 M
1
0.15
2
0.6
+0.1
-0.05
0.9 ±0.1
0.1 MAX.
0.1
A
0.15
+0.1
-0.05
0.2 M A
Foot Print
0.6
BF888
1.15
0.9
Marking Layout (Example)
Pin 1
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1 2.15
1.1
4
2010-04-06



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Infineon
BF888 pdf

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