BF862 Datasheet PDF - Philips


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BF862
Philips

Part Number BF862
Description N-channel junction FET
Page 7 Pages

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DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BF862
N-channel junction FET
Preliminary specification
1999 Jun 29



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Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
FEATURES
High transition frequency for excellent sensitivity in
AM car radios
High transfer admittance.
APPLICATIONS
Pre-amplifiers in AM car radios.
DESCRIPTION
Silicon N-channel symmetrical junction field-effect
transistor in a SOT23 package.
Drain and source are interchangeable.
PINNING SOT23
PIN
1 source
2 drain
3 gate
DESCRIPTION
handbook, halfpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VDS
VGS (off)
IDSS
Ptot
|yfs|
Tj
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain-source current
total power dissipation
transfer admittance
junction temperature
CONDITIONS
Ts 92 °C
MIN.
10
30
TYP.
0.7
40
MAX.
20
25
225
150
UNIT
V
V
mA
mW
mS
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Jun 29
2



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Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
VDS
VDG
VGS
IDS
IG
Ptot
Tstg
Tj
PARAMETER
drain-source voltage
drain-gate voltage
gate-source voltage
drain-source current
forward gate current
total power dissipation
storage temperature
junction temperature
CONDITIONS
Ts 92 °C
MIN.
65
MAX.
20
20
20
40
10
225
+150
150
UNIT
V
V
V
mA
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Notes
1. Soldering point of the gate lead.
CONDITIONS
note 1
VALUE
260
UNIT
K/W
handboo2k,5h0alfpage
Ptot
(mW)
200
150
100
50
0
0 40
MGS298
80 120 160
Ts (°C)
Fig.2 Power derating curve.
1999 Jun 29
3



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Philips Semiconductors
N-channel junction FET
Preliminary specification
BF862
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
VGS
VGS (off)
IGSS
IDSS
gate-source breakdown voltage
gate-source forward voltage
gate-source cut-off voltage
reverse gate current
drain-source current
IGS = 1 µA; VDS = 0
VDS = 0; IG = 1 mA
VDS = 8 V; ID = 1 µA
VGS = 15 V; VDS = 0
VGS = 0; VDS = 8 V
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VGS = 0; VDS = 8 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
yfs
gos
Ciss
Crss
en
fT
common source forward transfer Tj = 25 °C
admittance
common source output
conductance
Tj = 25 °C
input capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
equivalent noise input voltage f = 100 kHz
transition frequency
MIN.
20
10
TYP.
0.7
MAX.
1
1
25
UNIT
V
V
V
nA
mA
MIN. TYP. MAX. UNIT
30 40
mS
− − 400 µS
10 pF
2.5 pF
0.8 nV/Hz
640 MHz
1999 Jun 29
4




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