BD239 Datasheet PDF - Comset Semiconductors

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BD239
Comset Semiconductors

Part Number BD239
Description Medium Power Linear and Switching Applications
Page 3 Pages


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NPN BD239 – A – B – C
MEDIUM POWER LINEAR AND SWITCHING
APPLICATIONS.
The BD239, A, B, C are mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD240, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
Collector-Emitter Voltage
www.DataSheet.net/
Collector-Emitter Voltage (RBE = 100 )
VCBO
Collector-Base Voltage
VEBO
IC
IB
PT
TJ
TS
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
IC
ICM
@ Tamb = 25° C
@ Tcase = 25° C
THERMAL CHARACTERISTICS
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
Value
45
60
80
100
55
70
90
115
45
60
80
100
5.0
3
7
0.5
30
30
150
-65 to +150
Symbol
Ratings
RthJ-amb
RthJ-case
Thermal Resistance, Junction-ambient
Thermal Resistance, Junction-case
Value
70
4.17
Unit
V
V
V
V
A
A
W
W
°C
Unit
°C/W
°C/W
22/10/2012
COMSET SEMICONDUCTORS
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NPN BD239 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCE=30 V
BD239
ICEO
Collector Cutoff Current
VCE=30 V
VCE=60 V
BD239A
BD239B
VCE=60 V
BD239C
BD239
IEBO
Emitter Cutoff Current
VBE=5 V
BD239A
BD239B
BD239C
VCE=45 V
BD239
ICES
Collector Cutoff Current
(VBE = 0)
VCE=60 V
VCE=80 V
BD239A
BD239B
VCE=100 V
BD239C
VCEO(sus)
Collector-Emitter
Sustaining Voltage (IB = 0)
(*)
IC =30mA
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BD239
BD239A
BD239B
BD239C
BD239
VCE=4 V
IC=0.2 A
BD239A
BD239B
hFE DC Current Gain (*)
BD239C
BD239
VCE=4 V
IC=1 A
BD239A
BD239B
BD239C
VCE(SAT)
Collector-Emitter saturation IC=1 A
Voltage (*)
IB=200 mA
BD239
BD239A
BD239B
BD239C
BD239
VBE(on)
Base-Emitter Voltage (*)
VCE=4 V
IC=1 A
BD239A
BD239B
BD239C
VCE=10 V
IC=0.2 A
f = 1KHz
hfe Small Signal Current Gain
VCE=10 V
IC=0.2 A
f = 1MHz
BD239
BD239A
BD239B
BD239C
BD239
BD239A
BD239B
BD239C
fT
Transistor frequency
VCE=10 V, IC=0.2 A, f = 1MHz
(*) Pulse Width 300 µs, Duty Cycle 2.0%
Min
-
-
-
-
-
-
-
-
-
-
-
-
45
60
80
100
40
15
-
-
20
3
3
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max Unit
0.3 mA
1.0 mA
0.2 mA
V
-
-
-
0.6 V
1.3 V
--
--
- MHz
22/10/2012
COMSET SEMICONDUCTORS
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NPN BD239 – A – B – C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min. Max.
A 9,90 10,30
B 15,65 15,90
C 13,20 13,40
D 6,45 6,65
E 4,30 4,50
F
2,70
3,15
G
2,60
3,00
H 15,75 17.15
L
1,15
1,40
M
3,50
3,70
N - 1,37
P 0,46 0,55
R 2,50 2,70
S 4,98 5,08
T
2.49
2.54
U 0,70 0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
www.DataSheet.net/
Revised September 2012
         
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
 
www.comsetsemi.com
info@comsetsemi.com
22/10/2012
COMSET SEMICONDUCTORS
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