BD1LB500EFJ-C Datasheet PDF - Rohm

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BD1LB500EFJ-C
Rohm

Part Number BD1LB500EFJ-C
Description In-Vehicle 1ch Low Side Switch
Page 19 Pages


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Datasheet
1ch Low Side Switch IC
In-Vehicle 1ch Low Side Switch
BD1LB500 Series (BD1LB500EFJ-C BD1LB500FVM-C)
Features
Built-in overcurrent limiting circuit
Built-in thermal shutdown circuit (TSD)
Built-in open load detection circuit (at output OFF)
Enables direct control from CMOS logic ICs, etc.
Low standby current
Built-in under voltage lock out circuit
Built-in diagnostic output (ST) terminal
Low ON resistance RDS(ON)=350m(Typ) (VDD=IN=5V,
Ta=25°C, IOUT=0.25A)
Built-in overvoltage protection(active clamp) for output
circuit
Monolithic power IC in which the control unit (CMOS)
and power MOS FET are incorporated into one chip
1ch low side switch for driving mechanical relay coil
AEC-Q100 Qualified(1)
(1) Grade1
Overview
BD1LB500 Series is an in-vehicle 1ch low side switch.
This switch builds in the overcurrent limiting circuit,
thermal shutdown circuit, open load detection circuit and
under voltage lock out circuit. It also provides the
diagnostic output circuit when an abnormality is
detected.
Application
In-vehicle application (Air conditioners, body devices,
meters, etc.)
Basic Application Circuit (Recommendation)
VDD
Specifications
Operating voltage range
ON resistance (25°C, Typ.)
Overcurrent limitation (Typ.)
Active clamp energy (25°C)
3.5V to 5.5V
350m
1.50A
25mJ
Package
HTSOP-J8
MSOP8
4.90mm x 6.00mm x 1.00mm
2.90mm x 4.00mm x 0.90mm
HTSOP-J8
VBAT
RL
MSOP8
0.1µF
8
VDD
Logic
7
N.C.
6
DRAIN
Under voltage
lock out
Open load
detection
Overvoltage
protection
5
DRAIN
Rext (2)
Over current
Limit
SOURCE
IN
ST
SOURCE (GND)
(GND)
1234
10k (3)
(2) When the open detection function is required, an external resistance must be added between DRAIN terminal and SOURCE terminal.
(3) It is necessary to detect unusual state(ST terminal is low) when VDD terminal is opened.
Product configuration: Silicon monolithic integrated circuit
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© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
The product is not designed for radiation resistance.
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TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006



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BD1LB500 Series
Datasheet
Pin Descriptions
Pin No.
Symbol
Function
1 IN Input terminal; a pull down resistor is connected internally.
Self-diagnostic output terminal; outputs “L” at detection of overcurrent, at open (IN=0V),
2 ST and in the overheat state. See the truth table. It is structured as COMS inverter output
circuit.
3,4
SOURCE
(GND)
Ground terminal
5,6
DRAIN
Output terminal; limits output current to protect IC when load is short-circuited and current
exceeding the overcurrent detection value (0.8A Min) flows to the output terminal.
7
N.C.
No Connect pin
8
VDD
Power supply terminal
Cooling Tab (1)
TAB
The heat radiation metal on the substrate is connected to the IC sub. Therefore, connect
Cooling Tab to the external GND electrical potential (for HTSOP-J8 only).
(1)MSOP8 does not have Cooling Tab.
Pin Configurations
Product Name
BD1LB500EFJ-C
BD1LB500FVM-C
PKG
HTSOP-J8
MSOP8
TSD function
Self-restart
ON resistance
(25°C,Typ)
350m
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© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
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BD1LB500 Series
Datasheet
Absolute Maximum Ratings
Item
DRAIN-SOURCE voltage
Power supply voltage
Diagnostic output voltage
Output current (DC)
Output current (Pulse)
Input voltage
Power consumption
Operating temperature range
Storage temperature range
Maximum junction temperature
Active clamp energy (single pulse)
Symbol
VDS
VDD
VST
IOD
IOP
VIN
Pd
Topr
Tstg
Tjmax
EAS
Limit values
42 (internally limited)
7
-0.3 to +7 (1)
0.8 (2)
Internally limited(3)
-0.3 to +7 (1)
2.1(HTSOP-J8) (4)
0.587(MSOP8) (5)
-40Topr+150
-55 to +150
150
25 (6)
Operating Voltage Ratings
Item
Code
Limit values
Operating voltage range
VDD 3.5 to 5.5
(1) The condition, VDDVIN, VST is required.
(2) The value must not exceed Pd.
(3) Internally limited by the overcurrent limiting circuit.
(4) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 2-layer substrate).
When using at Ta 25°C, power dissipation is reduced at 16.8mW/°C.
(5) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy single-layer substrate).
When using at Ta 25°C, power dissipation is reduced at 4.7mW/°C.
(6) Min Active clamp energy at Tj(0) = 25°C, using single non-repetitive pulse of 0.4A
Unit
V
V
V
A
A
V
W
°C
°C
°C
mJ
Unit
V
Heat Dissipation Characteristics
4.00
3.75 W
3.50
3.00
2.50
2.1 W
2.00
1.50
HTSOP-J8 (1)
HTSOP-J8 (2)
1.00
0.587 W
0.50
MSOP8 (3)
0.00
0
25 50 75 100 125 150
Ta [℃]
(HTSOP-J8)
(MSOP8)
(1) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 4-layer substrate)
When using at Ta 25°C, power dissipation is reduced at 30mW/°C.
(2) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy 2-layer substrate)
When using at Ta 25°C, power dissipation is reduced at 16.8mW/°C.
(3) When mounting PCB (70×70[mm], thickness 1.6[mm], copper foil area 70×70[mm], glass epoxy single-layer substrate)
When using at Ta 25°C, power dissipation is reduced at 4.7mW/°C.
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
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TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006



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BD1LB500 Series
Datasheet
Electrical Characteristics (VDD=3.5V to 5.5V, -40°CTj≤ +150°C unless otherwise is specified)
Limit values
Item Symbol
Unit Condition
Min Typ Max
[Power Supply Block]
Standby current
IDDS
0
10 μA VDD=5V,VIN=0V,VB=12V,RL=47
Operating current
Under voltage lock
threshold voltage
[Input Block]
out
IDD
VUVLO
0.5 1.0 mA VDD=5V,VIN=5V,VB=12V,RL=47
2.5 3.0 V
H level input voltage
L level input voltage
Input hysteresis
VTH1
VTH2
VHYS
VDD×0.2
0.40
VDD×0.8
V
V
V
High level input current
IINH1
50 100 μA VIN=5V
Low level input current
IINL -1 0 1 μA VIN=0V
[Power MOS output]
Output ON resistance
Output leak current
RDS(ON)
RDS(ON)
IL(OFF)
IL(OFF)
350
450
m
VIN=5V,
VDD=5V,ID=0.25A,Tj=25°C
570
750
m
VIN=5V,
VDD=5V,ID=0.25A,Tj=150°C
10 μA VIN=0V,VDS=12V,Tj=25°C
100 μA VIN=0V,VDS=12V,Tj=150°C
Switching time
tON 20 40 μs VDD=5V,VIN=0V/5V, RL=47
tOFF
20
40 μs VDD=5V,VIN=0V/5V, RL=47
Slew rate (at ON)
dV/dtON
0.5
1
2 V/μs VDD=5V,VIN=0V/5V, RL=47
Slew rate (at OFF)
-dV/dtOFF
0.5
1
2 V/μs VDD=5V,VIN=0V/5V, RL=47
Output clamp voltage
VCL 42 47 52 V VIN=0V,IOUT=-1mA
[Diagnostic output]
Diagnostic output voltage
“L level”
Diagnostic output voltage
“H level”
Diagnostic output current
“H level”
VSTL
VSTH
ISTH
4.88
0.4 V VDD=5V,VIN=5V,IST=0.1mA
V VDD=5V,VIN=0V,IST=-0.1mA
10 μA VIN=0V,VST=5.5V
www.rohm.co.jp
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
4/16
TSZ02201-0G3G0BD00040-1-2
2015.04.01 Rev.006



BD1LB500EFJ-C datasheet pdf
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BD1LB500EFJ-C pdf
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