BCP69-25 Datasheet PDF - Infineon

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BCP69-25
Infineon

Part Number BCP69-25
Description PNP Silicon AF Transistor
Page 6 Pages


BCP69-25 datasheet pdf
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PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type: BCP68 (NPN)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCP69-25
43
2
1
Type
BCP69-25
Marking
Pin Configuration
...-25* 1=B 2=C 3=E 4=C -
-
Package
SOT223
* Marking is the same as type-name
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current, tp 10 ms
Base current
Peak base current
Total power dissipation-
TS 114 °C
Junction temperature
Storage temperature
Symbol
VCEO
VCES
VCBO
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Value
20
25
25
5
1
2
100
200
3
150
-65 ... 150
Unit
V
A
mA
W
°C
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
1
Value
12
Unit
K/W
2011-09-19



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BCP69-25
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 30 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
DC current gain2)
IC = 5 mA, VCE = 10 V
IC = 500 mA, VCE = 1 V, BCP69-16
IC = 500 mA, VCE = 1 V, BCP69-25
IC = 1 A, VCE = 1 V
V(BR)CEO 20
-
-
V(BR)CBO 25
-
-
V(BR)CES 25
-
-
V(BR)EBO 5 - -
ICBO
hFE
- - 0.1
- - 100
50 -
-
100 160 250
160 250 375
60 -
-
Collector-emitter saturation voltage2)
IC = 1 A, IB = 100 mA
Base-emitter voltage2)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
VCEsat
VBE(ON)
-
-
-
- 0.5
0.6 -
-1
Unit
V
µA
-
V
AC Characteristics
Transition frequency
IC = 100 mA, VCE = 5 V, f = 100 MHz
fT - 100
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300µs; D < 2%
- MHz
2 2011-09-19



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BCP69-25
DC current gain hFE = ƒ(IC)
VCE = 1 V
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 3 BCP 69
h FE 5
100 ˚C
102 25 ˚C
-50 ˚C
5
10 1
5
EHP00285
10 4 BCP 69
mA
ΙC
10 3
5
100 ˚C
25 ˚C
102 -50 ˚C
5
10 1
5
EHP00286
10 0
10 0
10 1 10 2
mA 104
ΙC
10 0
0
0.2 0.4 0.6 V 0.8
V CEsat
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
10 4 BCP 69
mA
ΙC
10 3
10 2
10 1
100 ˚C
25 ˚C
-50 ˚C
EHP00287
10 5 BCP 69
nA
Ι CBO
10 4
10 3
10 2
10 1
EHP00284
max
typ
10 0
0
0.2 0.4 0.6 0.8 V 1.2
V BEsat
10 0
0
3
50 100 ˚C 150
TA
2011-09-19



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BCP69-25
Transition frequency fT = ƒ(IC)
VCE = 5 V
Total power dissipation Ptot = ƒ(TS)
10 3 BCP 69
MHz
fT 5
EHP00283
3.5
W
2.5
2
10 2
1.5
5
1
10 1
10 0 10 1 10 2 mA 10 3
ΙC
Permissible Pulse Load RthJS = ƒ(tp)
0.5
00 15 30 45 60 75 90 105 120 °C 150
ts
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 2
10 3
-
D=0
0.005
0.01
10 1 10 2 0.02
0.05
0.1
0.2
D = 0,5
0.5
0,2
0,1
10 0 0,05
10 1
0,02
0,01
0,005
0
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
4 2011-09-19



BCP69-25 datasheet pdf
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BCP69-25 pdf
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Infineon
BCP69-25 pdf

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