BC850ALT1 Datasheet PDF - Motorola

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BC850ALT1
Motorola

Part Number BC850ALT1
Description General Purpose Transistors
Page 6 Pages


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BC846ALT1/D
wGwwe.DnataeShreaet4lU.cPomurpose Transistors
NPN Silicon
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
EMITTER
Rating
BC847 BC848
Symbol BC846 BC850 BC849
Unit
Collector – Emitter Voltage
VCEO
65
45
30
V
Collector – Base Voltage
VCBO
80
50
30
V
Emitter – Base Voltage
VEBO
6.0
6.0
5.0
V
Collector Current — Continuous
IC 100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance, Junction to Ambient
Rq JA
556
°C/W
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
PD
300 mW
2.4 mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Rq JA
TJ, Tstg
417
– 55 to +150
°C/W
°C
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F;
BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 mA)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CEO
Collector – Emitter Breakdown Voltage BC846A,B
(IC = 10 µA, VEB = 0)
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CES
Collector – Base Breakdown Voltage
(IC = 10 m A)
BC846A,B
BC847A,B,C, BC850A,B,C
BC848A,B,C, BC849A,B,C
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 1.0 m A)
BC846A,B
BC847A,B,C
V(BR)EBO
BC848A,B,C, BC849A,B,C, BC850A,B,C
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
1. FR–5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
BC846ALT1,BLT1
BC847ALT1,
BLT1,CLT1 thru
BC850ALT1,BLT1,
CLT1
BC846, BC847 and BC848 are
Motorola Preferred Devices
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min Typ Max Unit
65 — —
45 — —
30 — —
V
80 — —
50 — —
30 — —
V
80 — —
50 — —
30 — —
V
6.0 — —
6.0 — —
5.0 — —
V
— — 15 nA
— — 5.0 µA
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1



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BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
wwDwC.DCatuarSrehneteGt4aUin.com
(IC = 10 µA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE — 90 — —
— 150 —
— 270 —
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A, BC849A, BC850A
BC846B, BC847B, BC848B, BC849B, BC850B
BC847C, BC848C, BC849C, BC850C
Collector – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base – Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base – Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base – Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Noise Figure (IC = 0.2 mA,
VCE = 5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
BC849A,B,C, BC850A,B,C
110 180 220
200 290 450
420 520 800
VCE(sat)
— 0.25 V
— 0.6
VBE(sat)
0.7
V
— 0.9 —
VBE(on) 580 660 700 mV
— — 770
fT 100 — — MHz
Cobo
4.5 pF
NF dB
— — 10
— — 4.0
2.0
1.5
VCE = 10 V
TA = 25°C
1.0
0.8
0.6
0.4
0.3
0.2
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
1.0
0.9 TA = 25°C
0.8 VBE(sat) @ IC/IB = 10
0.7
0.6 VBE(on) @ VCE = 10 V
0.5
0.4
0.3
0.2
0.1 VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
2.0
TA = 25°C
1.6
IC = 200 mA
1.2
IC = IC = IC = 50 mA
IC = 100 mA
10 mA 20 mA
0.8
0.4
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
0.02
0.1 1.0
IB, BASE CURRENT (mA)
10 20
Figure 3. Collector Saturation Region
0.2 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data



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BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
BC847/BC848
10
www.DataSheet4U.com
7.0
5.0
3.0
2.0
Cib
Cob
TA = 25°C
1.0
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
20
40
400
300
200
100
80
VCE = 10 V
TA = 25°C
60
40
30
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10 20
IC, COLLECTOR CURRENT (mAdc)
30
50
Figure 6. Current–Gain – Bandwidth Product
VCE = 5 V
TA = 25°C
2.0
1.0
0.5
0.2
0.1 0.2
1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
1.0
TA = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 5.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
2.0
TA = 25°C
1.6
20 mA 50 mA 100 mA
200 mA
1.2
0.8
IC =
10 mA
0.4
0
0.02
0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
5.0 10
Figure 9. Collector Saturation Region
20
–1.0
–1.4
–1.8
θVB for VBE
–55°C to 125°C
–2.2
–2.6
–3.0
0.2
0.5 1.0 2.0 5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3



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BC846ALT1, BLT1 BC847ALT1, BLT1, CLT1 thru BC850ALT1, BLT1, CLT1
BC846
40
www.DataSheet4U.com
20
10
6.0
4.0
TA = 25°C
Cib
Cob
2.0
0.1 0.2
0.5 1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
50 100
500
VCE = 5 V
TA = 25°C
200
100
50
20
1.0 5.0 10
50 100
IC, COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data



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BC850ALT1 General Purpose Transistors BC850ALT1
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