BC848 Datasheet PDF - Philips


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BC848
Philips

Part Number BC848
Description NPN general purpose transistors
Page 12 Pages

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847; BC848
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 23
2002 Feb 04



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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.
MARKING
TYPE NUMBER
BC846
BC846A
BC846B
BC847
BC847A
BC847B
BC847C
BC848B
MARKING CODE(1)
1D*
1A*
1B*
1H*
1E*
1F*
1G*
1K*
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
handbook, halfpage
3
1
Top view
1
2
MAM255
3
2
Fig.1 Simplified outline (SOT23) and symbol.
2002 Feb 04
2



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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC846
BC847
BC848
collector-emitter voltage
BC846
BC847
BC848
emitter-base voltage
BC846; BC847
BC848
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
in free air; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
MIN.
MAX.
UNIT
80 V
50 V
30 V
65 V
45 V
30 V
6V
5V
100 mA
200 mA
200 mA
250 mW
65
+150
°C
150 °C
65
+150
°C
VALUE
500
UNIT
K/W
2002 Feb 04
3



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Philips Semiconductors
NPN general purpose transistors
Product specification
BC846; BC847; BC848
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
ICBO collector-base cut-off current
IEBO
hFE
VCEsat
emitter-base cut-off current
DC current gain
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
DC current gain
BC846
BC847
BC846A; BC847A
BC846B; BC847B; BC848B
BC847C
collector-emitter saturation voltage
VBEsat
base-emitter saturation voltage
VBE base-emitter voltage
Cc collector capacitance
fT transition frequency
F noise figure
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
CONDITIONS
VCB = 30 V; IE = 0
VCB = 30 V; IE = 0;
Tj = 150 °C
VEB = 5 V; IC = 0
IC = 10 µA; VCE = 5 V
IC = 2 mA; VCE = 5 V
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA;
note 1
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA;
note 1
IC = 2 mA; VCE = 5 V
IC = 10 mA; VCE = 5 V
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
VCE = 5 V; IC = 10 mA;
f = 100 MHz
IC = 200 µA; VCE = 5 V;
RS = 2 k; f = 1 kHz;
B = 200 Hz
MIN.
TYP.
MAX. UNIT
15 nA
5 µA
− − 100 nA
90
150
270
110
450
110
800
110 180 220
200 290 450
420 520 800
90 250 mV
200 600 mV
700 mV
900 mV
580 660 700 mV
− − 770 mV
2.5 pF
100 − − MHz
2 10 dB
2002 Feb 04
4




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