BC817-40W Datasheet PDF - ON Semiconductor


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BC817-40W
ON Semiconductor

Part Number BC817-40W
Description General Purpose NPN Transistor
Page 5 Pages

BC817-40W datasheet pdf
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BC817-40W
45 V, 0.5 A, General
Purpose NPN Transistor
ON Semiconductor’s BC817−40W is a General Purpose NPN
Transistor that is housed in the SC−70/SOT−323 package.
Features
AEC-Q101 Qualified and Consult Factory for PPAP Capable
This Device is Pb−Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Value
Unit
Collector − Emitter Voltage
VCEO
45
V
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCBO
VEBO
IC
50 V
5.0 V
500 mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 1)
Thermal Resistance,
Junction−to−Ambient (Note 1)
PD
RqJA
460 mW
272 °C/W
Junction and Storage Temperature
Range
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2
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COLLECTOR
3
1
BASE
2
EMITTER
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
CE MG
G
1
CE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
BC817−40WT1G
Package
SC−70
(Pb−Free)
Shipping
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 1
1
Publication Order Number:
BC817−40W/D



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BC817−40W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0 V, IC = 10 mA)
Emitter −Base Breakdown Voltage
(IE = 1.0 mA)
Collector Cutoff Current
(VCB = 20 V)
(VCB = 20 V, TA = 150°C)
ON CHARACTERISTICS
V(VR)CEO
V(VR)CES
V(VR)EBO
ICBO
45
50
5.0
−−
−−
−−
− 100
− 5.0
V
V
V
nA
mA
DC Current Gain (Note 2)
(IC = 100 mA, VCE = 1.0 V)
(IC = 500 mA, VCE = 1.0 V)
Collector −Emitter Saturation Voltage (Note 2)
(IC = 500 mA, IB = 50 mA)
Base −Emitter On Voltage (Note 2)
(IC = 500 mA, VCE = 1.0 V)
SMALL− SIGNAL CHARACTERISTICS
hFE
250 − 600
40 −
VCE(sat) − − 0.7
VBE(on)
− − 1.2
V
V
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT 100 − − MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
− 10 −
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Condition: Pulse Width = 300 msec, Duty Cycle 2%
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BC817−40W
TYPICAL CHARACTERISTICS
700
150°C
600
500
400 25°C
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
−55°C
300
−55°C
200
0.01
100
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
0.001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
1000
VCE = 1 V
TA = 25°C
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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BC817−40W
TYPICAL CHARACTERISTICS
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
100
+1
qVC for VCE(sat)
0
-1
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
Cib
10
Cob
1
0.1 1 10 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
1
100 ms
1 ms
1 s 10 ms
Thermal Limit
0.1
0.01
Single Pulse Test @ TA = 25°C
0.001
0.01 0.1
1
VCE (Vdc)
10
Figure 9. Safe Operating Area
100
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