BC636TA Datasheet PDF - Fairchild Semiconductor


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BC636TA
Fairchild Semiconductor

Part Number BC636TA
Description PNP EPITAXIAL SILICON TRANSISTOR
Page 5 Pages

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October 2015
BC636
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Complement to BC635
Ordering Information
Part Number
BC636TA
Top Mark
BC636
123
Straight Lead
Bulk Packing
TO-92
1. Emitter
12
3
2. Collector
3. Base
Bent Lead
Tape & Reel
Ammo Packing
Package
TO-92 3L
Packing Method
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCER
VCES
VCEO
VEBO
IC
ICP
IB
TJ
TSTG
Collector-Emitter Voltage at RBE = 1 KΩ
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
Junction Temperature
Storage Temperature
-45
-45
-45
-5
-1
-1.5
-100
150
-65 to 150
V
V
V
V
A
A
mA
°C
°C
© 2004 Fairchild Semiconductor Corporation
BC636 Rev. 1.3
www.fairchildsemi.com



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Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
Power Dissipation
PD Derate Above 25°C
1W
8 mW/°C
RθJA
Thermal Resistance, Junction-to-Ambient
125 °C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
BVCEO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)
VBE(on)
fT
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Collector Cut-Off Current
VCB = -30 V, IE = 0
Emitter Cut-Off Current
VEB = -5 V, IC = 0
VCE = -2 V, IC = -5 mA
DC Current Gain
VCE = -2 V, IC = -150 mA
VCE = -2 V, IC = -500 mA
Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mA
Base-Emitter On Voltage
VCE = -2 V, IC = -500 mA
Current Gain Bandwidth Product
VCE = -5 V, IC = -10 mA,
f = 50 MHz
Min.
-45
25
40
25
Typ.
100
Max.
-0.1
-10
250
-0.5
-1
Unit
V
μA
μA
V
V
MHz
© 2004 Fairchild Semiconductor Corporation
BC636 Rev. 1.3
2
www.fairchildsemi.com



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Typical Performance Characteristics
-500
IB = - 1.8 mA
IB = - 1.6 mA
-400
IB = - 1.4 mA
IB = - 1.2 mA
-300 IB = - 1.0 mA
IB = - 0.8 mA
-200 IB = - 0.6 mA
IB = - 0.4 mA
-100 IB = - 0.2 mA
-0
-0 -10 -20 -30 -40 -50
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-10
IC = 10 IB
-1 VBE(sat)
-0.1
VCE(sat)
-0.01
-1
-10 -100 -1000
IC[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
100
f=1MHz
10
1000
100
VCE = - 2V
10
-1
-10 -100
IC[mA], COLLECTOR CURRENT
Figure 2. DC Current Gain
-1000
-1000
VCE = - 2V
-100
-10
-1
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 4. Base-Emitter On Voltage
1
-1 -10 -100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2004 Fairchild Semiconductor Corporation
BC636 Rev. 1.3
3
www.fairchildsemi.com



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Physical Dimensions
Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type
© 2004 Fairchild Semiconductor Corporation
BC636 Rev. 1.3
4
www.fairchildsemi.com




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