BC369 Datasheet PDF - SEMTECH

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BC369
SEMTECH

Part Number BC369
Description PNP Silicon Epitaxial Planar Transistor
Page 2 Pages

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BC369
PNP Silicon Epitaxial Planar Transistor
Applications
• General purpose switching and amplification
• Power application such as audio output stages
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 10 V, -IC = 5 mA
at -VCE = 1 V, -IC = 500 mA
at -VCE = 1 V, -IC = 1 A
Collector Base Cutoff Current
at -VCB = 25 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 100 mA
Base Emitter On Voltage
at -VCE = 1 V, -IC = 1 A
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 20 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICM
Ptot
Tj
TS
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
32
20
5
1
2
625
150
- 55 to + 150
Unit
V
V
V
A
A
mW
OC
OC
Symbol
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(on)
fT
Min.
50
85
60
-
-
32
20
5
-
-
40
Max.
-
375
-
100
100
-
-
-
0.5
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007

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