BC338 Datasheet PDF - Siemens

www.Datasheet-PDF.com

BC338
Siemens

Part Number BC338
Description NPN Silicon AF Transistors
Page 6 Pages


BC338 datasheet pdf
View PDF for PC
BC338 pdf
View PDF for Mobile


No Preview Available !

NPN Silicon AF Transistors
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BC 327, BC 328 (PNP)
BC 337
BC 338
2
3
1
Type
BC 337
BC 337-16
BC 337-25
BC 337-40
BC 338
BC 338-16
BC 338-25
BC 338-40
Marking
Ordering Code
Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
Pin Configuration
123
CBE
Package1)
TO-92
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91



No Preview Available !

BC 337
BC 338
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case1)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 337
BC 338
45 25
50 30
5
800
1
100
200
625
150
– 65 … + 150
Unit
V
mA
A
mA
mW
˚C
Rth JA
Rth JC
200
135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2



No Preview Available !

BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 –
BC 338
25 –
Collector-base breakdown voltage
IC = 100 µA
BC 337
BC 338
V(BR)CB0
50
30
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5 – –
Collector cutoff current
VCB = 25 V
VCB = 45 V
VCB = 25 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
ICB0
BC 338
– – 100 nA
BC 337
– – 100 nA
BC 338
– – 10 µA
BC 337
– – 10 µA
Emitter cutoff current
VEB = 4 V
IEB0 – – 100 nA
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
IC = 300 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
hFE
100 160 250
160 250 400
250 350 630
60 –
100 –
170 –
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VCEsat
0.7 V
Base-emitter saturation voltage
IC = 500 mA; IB = 50 mA
VBEsat
2
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
3



No Preview Available !

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, f = 1 MHz
BC 337
BC 338
Symbol
Values
Unit
min. typ. max.
fT
Cobo
Cibo
170 –
8–
60 –
MHz
pF
Semiconductor Group
4



BC338 datasheet pdf
Download PDF
BC338 pdf
View PDF for Mobile


Related : Start with BC33 Part Numbers by
BC3311IR-141-N Leaded Power Chokes BC3311IR-141-N
Chilisin Electronics
BC3311IR-141-N pdf
BC337 Amplifier Transistor BC337
Motorola Inc
BC337 pdf
BC337 Amplifier Transistors BC337
ON Semiconductor
BC337 pdf
BC337 500mA NPN general-purpose transistors BC337
NXP
BC337 pdf
BC337 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications BC337
Semtech Corporation
BC337 pdf
BC337 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) BC337
Siemens Semiconductor Group
BC337 pdf
BC337 SWITCHING AND AMPLIFIER APPLICATIONS BC337
Fairchild Semiconductor
BC337 pdf
BC337 Small Signal Transistors (NPN) BC337
General Semiconductor
BC337 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact