BC337-40 Datasheet PDF - Siemens

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BC337-40
Siemens

Part Number BC337-40
Description NPN Silicon AF Transistors
Page 6 Pages


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NPN Silicon AF Transistors
q High current gain
q High collector current
q Low collector-emitter saturation voltage
q Complementary types: BC 327, BC 328 (PNP)
BC 337
BC 338
2
3
1
Type
BC 337
BC 337-16
BC 337-25
BC 337-40
BC 338
BC 338-16
BC 338-25
BC 338-40
Marking
Ordering Code
Q62702-C313
Q62702-C313-V3
Q62702-C313-V1
Q62702-C313-V2
Q62702-C314
Q62702-C314-V1
Q62702-C314-V2
Q62702-C314-V3
Pin Configuration
123
CBE
Package1)
TO-92
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
5.91



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BC 337
BC 338
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TC = 66 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
Junction - case1)
Symbol
VCE0
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
BC 337
BC 338
45 25
50 30
5
800
1
100
200
625
150
– 65 … + 150
Unit
V
mA
A
mA
mW
˚C
Rth JA
Rth JC
200
135
K/W
1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
2



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BC 337
BC 338
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage
V(BR)CE0
V
IC = 10 mA
BC 337
45 –
BC 338
25 –
Collector-base breakdown voltage
IC = 100 µA
BC 337
BC 338
V(BR)CB0
50
30
Emitter-base breakdown voltage
IE = 10 µA
V(BR)EB0 5 – –
Collector cutoff current
VCB = 25 V
VCB = 45 V
VCB = 25 V, TA = 150 ˚C
VCB = 45 V, TA = 150 ˚C
ICB0
BC 338
– – 100 nA
BC 337
– – 100 nA
BC 338
– – 10 µA
BC 337
– – 10 µA
Emitter cutoff current
VEB = 4 V
IEB0 – – 100 nA
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
IC = 300 mA; VCE = 1 V
BC 337/16; BC 338/16
BC 337/25; BC 338/25
BC 337/40; BC 338/40
hFE
100 160 250
160 250 400
250 350 630
60 –
100 –
170 –
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA
VCEsat
0.7 V
Base-emitter saturation voltage
IC = 500 mA; IB = 50 mA
VBEsat
2
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
3



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Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Input capacitance
VEB = 0.5 V, f = 1 MHz
BC 337
BC 338
Symbol
Values
Unit
min. typ. max.
fT
Cobo
Cibo
170 –
8–
60 –
MHz
pF
Semiconductor Group
4



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