BAT54HT1G Datasheet PDF - Fairchild Semiconductor

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BAT54HT1G
Fairchild Semiconductor

Part Number BAT54HT1G
Description Schottky Barrier Diodes
Page 5 Pages


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BAT54HT1G
Schottky Barrier Diodes
July 2013
SOD-323
1
A2
2
Connection Diagram
1
2
Ordering Information
Part Number
BAT54HT1G
Marking
A2
Package
SOD-323 2L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VRRM
IF(AV)
IFSM
TSTG
TJ
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
30
200
600
-65 to +150
-55 to +150
V
mA
mA
°C
°C
* These ratings are limiting values above which the serviceability of the diode may be impaired.
Note:
1)These ratings are based on a maximum junction temperature of 150 °C.
These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
© 2004 Fairchild Semiconductor Corporation
BAT54HT1G Rev. 1.2.0
1
www.fairchildsemi.com



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Thermal Characteristics
Symbol
Parameter
PD
RθJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
200
600
Units
mW
°C/W
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
VR Breakdown Voltage
IR = 10 μA
IF = 0.1 mA
IF = 1.0 mA
VF Forward Voltage
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR Reverse Leakage
CT Total Capacitance
VR = 25 V
VR = 1 V, f = 1.0 MHz
trr
Reverse Recovery Time
IF = IR = 10 mA, IRR = 1.0 mA,
RL = 100 Ω
Min.
30
Max.
240
320
400
500
0.8
2.0
10
5.0
Units
V
mV
mV
mV
mV
V
μA
pF
ns
© 2004 Fairchild Semiconductor Corporation
BAT54HT1G Rev. 1.2.0
2
www.fairchildsemi.com



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Typical Performance Characteristics
0.1 150 oC
125 oC
0.01
100 oC
1E-3
75 oC
1E-4
1E-5
25 oC
1E-6
0.0
0.2 0.4
Forward Voltage Drop, VF[V]
0.6
0.8
Figure 1. Forward Current Characteristics
16
15
13
12
11
9
8
7
5
4
3
02468
Reverse Voltage, VR[V]
Figure 3. Junction Capacitance
10
1E-3
1E-4
1E-5
1E-6
150 oC
125 oC
100 oC
75 oC
1E-7
1E-8
0
25 oC
5 10 15 20 25
Reverse Voltage, VR[V]
Figure 2. Reverse Leakage Current
30
© 2004 Fairchild Semiconductor Corporation
BAT54HT1G Rev. 1.2.0
3
www.fairchildsemi.com



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Physical Dimensions
SOD-323 2L
Figure 4. 2-LEAD, SOD323, JEITA SC76 (FORMED LEADS) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/SO/SOD323.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-SOD323_BK.pdf.
© 2004 Fairchild Semiconductor Corporation
BAT54HT1G Rev. 1.2.0
4
www.fairchildsemi.com



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