BAR90-02ELS Datasheet PDF - Infineon

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BAR90-02ELS
Infineon

Part Number BAR90-02ELS
Description Silicon Deep Trench PIN Diodes
Page 10 Pages


BAR90-02ELS datasheet pdf
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Silicon Deep Trench PIN Diodes
Optimized for low bias current antenna
switches in hand held applications
Very low capacitance at zero volt
reverse bias at frequencies
above 1GHz (typ. 0.19 pF)
Low forward resistance
(typ. 1.3 @ IF = 3 mA)
Improved ON / OFF mode harmonic
distortion balance
Pb-free (RoHS compliant) package
BAR90...
BAR90-02EL
BAR90-02ELS
12
BAR90-098LRH
4
D1
3
D2
12
Type
BAR90-02ELS
BAR90-02EL
BAR90-098LRH
Package
TSSLP-2-3
TSLP-2-19
TSLP-4-7
* Marking of TSSLP-2-3 with underline
Configuration
single, leadless
single, leadless
anti-parallel pair, leadless
LS(nH)
0.2
0.4
0.4
Marking
J*
X
T9
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 137 °C, BAR90-02ELS
TS 133°C, all others
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Value
80
100
150
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
1 2013-06-10



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BAR90...
Thermal Resistance
Parameter
Junction - soldering point1)
BAR90-02ELS
All others
Symbol
RthJS
Value
90
65
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 60 V
Forward voltage
IF = 3 mA
IF = 100 mA
V(BR)
IR
VF
80 -
-
- - 50
0.75 0.81 0.87
- 0.9 1
Unit
V
nA
V
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2 2013-06-10



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BAR90...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
min.
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT
-
-
-
-
Values
typ. max.
0.25
0.3
0.19
0.18
0.35
-
-
-
Unit
pF
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
RP k
- 35 -
- 5-
- 4-
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 3 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100
rf
τ rr
-2-
- 1.3 2.3
- 0.8 -
- 750 - ns
I-region width
Insertion loss1)
IF = 1 mA, f = 1.8 GHz
IF = 3 mA, f = 1.8 GHz
IF = 10 mA, f = 1.8 GHz
Isolation1)
VR = 0 V, f = 0.9 GHz
VR = 0 V, f = 1.8 GHz
VR = 0 V, f = 2.45 GHz
WI - 20 - µm
IL dB
- 0.16 -
- 0.11 -
- 0.08 -
ISO
- 18.5 -
- 13.5 -
- 11.5 -
1BAR90-02EL in series configuration, Z = 50
3 2013-06-10



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BAR90...
Diode capacitance CT = ƒ (VR)
f = Parameter
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0.5
pF
0.4
0.35
0.3
1 MHz
100 MHz
1 GHz
0.25 1.8 GHz
0.2
0.15
0.10 2 4 6 8 10 12 14 16 V 20
VR
10 4
KOhm
10 3
10 2
10 1
10 0
100 MHz
1 GHz
1.8 GHz
10 -1
0 2 4 6 8 10 12 14 16 V 20
VR
Forward resistance rf = ƒ (IF)
f = 100 MHz
10 1
Ohm
Forward current IF = ƒ (VF)
TA = Parameter
10 -1
A
10 -2
10 -3
10 0
10 -4
-40°C
+25 °C
+85 °C
10 -5
+125 °C
10
-1
10
-1
10 0
10 1 mA 10 2
IF
10 -6
0.2 0.4 0.6 0.8 V
1.2
VF
4 2013-06-10



BAR90-02ELS datasheet pdf
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BAR90-02ELS pdf
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