BAR67-04 Datasheet PDF - Infineon

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BAR67-04
Infineon

Part Number BAR67-04
Description Silicon PIN Diode
Page 9 Pages


BAR67-04 datasheet pdf
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Silicon PIN Diode
For low loss RF switches and attenuators
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
Low forward resistance (typ. 1.5 @ 5mA)
Low harmonics
Pb-free (RoHS compliant) package
BAR67...
BAR67-02V
BAR67-04
!
 , ,

Type
BAR67-02V
BAR67-04
Package
SC79
SOT23
Configuration
single
series
LS(nH)
0.6
1.8
Marking
T
PMs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Total power dissipation
TS 118°C, BAR67-02V
TS 25°C, BAR67-04
VR
IF
Ptot
Junction temperature
Operating temperature range
Storage temperature
Tj
Top
Tstg
Value
150
200
250
250
150
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Thermal Resistance
Parameter
Junction - soldering point1)
BAR67-02V
BAR67-04
Symbol
RthJS
Value
115
290
Unit
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
1 2011-06-14



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BAR67...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 5 µA
Reverse current
VR = 100 V
Forward voltage
IF = 50 mA
V(BR)
IR
VF
150 -
-V
- - 20 nA
- 0.95 1.2 V
AC Characteristics
Diode capacitance
VR = 5 V, f = 1 MHz
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
CT pF
- 0.35 0.55
- 0.35 0.9
- 0.25 -
- 0.23 -
Reverse parallel resistance
VR = 0 V, f = 100 MHz
VR = 0 V, f = 1 GHz
VR = 0 V, f = 1.8 GHz
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100
I-region width
RP
rf
τ rr
WI
k
- 25 -
-4-
- 2.5 -
- 1.5 1.8
- 1-
- 700 - ns
- 13 - µm
2 2011-06-14



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BAR67...
Diode capacitance CT = ƒ (VR)
f = Parameter
Reverse parallel resistance RP = ƒ(VR)
f = Parameter
0.5
F
0.4
1 MHz
0.35 100 MHz
1 GHz
1.8 GHz
0.3
0.25
0.2
0.15
0.10 5 10 15 20 25 30 V 40
VR
10 4
KOhm
10 3
10 2 100 MHz
10 1 1 GHz
1.8 GHz
10 0
10 -1
0
5 10 15 20 25 30 V 40
VR
Forward resistance rf = ƒ (IF)
f = 100MHz
10 3
Ohm
10 2
Forward current IF = ƒ (VF)
TA = Parameter
10 0
A
10 -1
10 -2
10 1
10 -3
-40 °C
25 °C
10 -4
85 °C
125 °C
10 0
10 -5
10
-1
10
-2
10 -1
10 0
10 1 mA 10 2
IF
10 -6
0
3
0.2 0.4 0.6 0.8 V
1.2
VF
2011-06-14



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BAR67...
Forward current IF = ƒ (TS)
BAR67-02V
Forward current IF = ƒ (TS)
BAR67-04
250
mA
200
175
150
125
100
75
50
25
00 15 30 45 60 75 90 105 120 °C 150
TS
220
mA
180
160
140
120
100
80
60
40
20
00
20 40 60 80 100 120 °C 150
TS
Permissible Puls Load RthJS = ƒ (tp)
BAR67-02V
10 3
K/W
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAR67-02V
10 2
10 2
D=0.5
10 1 0.2
0.1
0.05
0.02
0.01
0.005
10 0 0
D=0
0.005
0.01
0.02
0.05
10 1 0.1
0.2
0.5
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tP
4
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tP
2011-06-14



BAR67-04 datasheet pdf
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BAR67-04 pdf
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Related : Start with BAR67-0 Part Numbers by
BAR67-02V Silicon PIN Diode BAR67-02V
Infineon Technologies AG
BAR67-02V pdf
BAR67-04 Silicon PIN Diode BAR67-04
Infineon
BAR67-04 pdf

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