BA895-02V Datasheet PDF - Infineon

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BA895-02V
Infineon

Part Number BA895-02V
Description Silicon PIN Diode
Page 11 Pages


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Silicon PIN Diode
Current-controlled RF resistor
for switching and attenuating applications
Frequency range 1 MHz ... 2 GHz
Especially useful as antenna switch
in TV-sat tuners
Very low harmonics
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BA595/BA885/BA895...
BA595
BA895
BA895-02V

BA885
!

Type
BA595
BA885
BA895*
BA895-02V
* Not for new design
Package
SOD323
SOT23
SCD80
SC79
Configuration
single
single
single
single
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
VR
IF
TJ
Top
TStg
LS(nH)
1.8
1.8
0.6
0.6
Marking
white R
PA
RA
1
Value
50
50
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 2014-02-11



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BA595/BA885/BA895...
Thermal Resistance
Parameter
Junction - soldering point1)
BA595, BA885
BA895, -02V
Symbol
RthJS
Value
370
95
1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit
K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 30 V
Forward voltage
IF = 50 mA
IR - - 20
VF - - 1.1
AC Characteristics
Diode capacitance
VR = 0 V, f = 100 MHz
VR = 10 V, f = 1 MHz
CT
- 0.26 0.4
- 0.22 0.6
Reverse parallel resistance
VR = 1 V, f = 100 MHz
VR = 0 V, f = 1 GHz
RP
Forward resistance
IF = 1.5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
rf
Charge carrier life time
τ rr
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA ,
RL = 100
I-region width
WI
- 50 -
- 10 -
- 22 40
- 4.5 7
- 1600 -
- 130 -
Unit
nA
V
pF
k
ns
µm
2 2014-02-11



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BA595/BA885/BA895...
Diode capacitance CT = ƒ (VR)
f = Parameter
Forward resistance rf = ƒ (IF)
f = Parameter
0.5
pF
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
00
1 MHz
100 MHz
1 GHz
5 10 15 20 V 30
VR
10 3 BA 885
rf
10 2
10 1
10 0
10 -1
10 0
EHD07016
10 1 mA 10 2
ΙF
Forward current IF = ƒ (VF)
TA = Parameter
Forward current IF = ƒ (TS)
BA595
10 0
mA
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
0
-40°C
+25°C
+85°C
+125°C
0.2 0.4 0.6 0.8
1 °C 1.3
TS
60
mA
50
45
40
35
30
25
20
15
10
5
00 15 30 45 60 75 90 105 120 °C 150
TS
3 2014-02-11



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BA595/BA885/BA895...
Forward current IF = ƒ (TS)
BA895, -02V
Permissible Puls Load RthJS = ƒ (tp)
BA595
60
mA
50
45
40
35
30
25
20
15
10
5
00 15 30 45 60 75 90 105 120 °C 150
TS
10 3
K/W
10 2
10 1
10
0
10
-6
10 -5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 -4 10 -3
10 -2
s 10 0
tp
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BA595
10 1
Permissible Puls Load RthJS = ƒ (tp)
BA895, -02V
10 3
K/W
D=0
0.005
0.01
- 0.02
0.05
0.1
0.2
0.5
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
4
10 2
10 1
10
0
10
-6
10 -5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 -4 10 -3
10 -2
s 10 0
tp
2014-02-11



BA895-02V datasheet pdf
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BA895-02V pdf
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BA895-02V Silicon PIN Diode BA895-02V
Infineon
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