B968 Datasheet PDF - Panasonic

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B968
Panasonic

Part Number B968
Description 2SB968
Page 3 Pages


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Power Transistors
2SB968
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
6.5±0.1
5.3±0.1
4.35±0.1
Unit: mm
2.3±0.1
0.5±0.1
s Features
q Possible to solder the radiation fin directly to printed cicuit board
q High collector to emitter VCEO
q Large collector power dissipation PC
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (TC=25°C)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–50
–40
–5
–3
–1.5
20
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
IEBO
VCBO
VCEO
hFE*
VCE(sat)
VBE(sat)
fT
Cob
VCB = –20V, IE = 0
VCE = –10V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –2mA, IB = 0
VCE = –5V, IC = –1A
IC = –1.5A, IB = – 0.15A
IC = –2A, IB = – 0.2A
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –20V, IE = 0, f = 1MHz
0.93±0.1
1.0±0.1
0.1±0.05
0.5±0.1
2.3±0.1
4.6±0.1
0.75±0.1
123
6.5±0.2
5.35
4.35
1:Base
2:Collector
3:Emitter
U Type Package
Unit: mm
2.3 2.3
0.75
0.6
123
0.5±0.1
1:Base
2:Collector
3:Emitter
EIAJ:SC–63
U Type Package (Z)
min typ max Unit
–1 µA
–100 µA
–10 µA
–50 V
–40 V
50 220
–1 V
–1.5 V
150 MHz
45 pF
*hFE Rank classification
Rank
P
hFE 50 to 100
Q
80 to 160
R
120 to 220
1



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Power Transistors
PC — Ta
32
TC=Ta
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
– 0.5
IC — VCE
TC=25˚C
IB=–40mA
–35mA
–30mA
–25mA
–20mA
–15mA
–10mA
–5mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SB968
VCE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
– 0.03
TC=100˚C
25˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
VBE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
1000
300
100
hFE — IC
VCE=–5V
TC=100˚C 25˚C
–25˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
fT — IE
240
VCB=–5V
f=200MHz
200 TC=25˚C
160
120
80
40
0
10 30 100 300 1000 3000 10000
Emitter current IE (mA)
Cob — VCB
150
IE=0
f=1MHz
TC=25˚C
120
90
60
30
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–120
–100
VCER — RBE
TC=25˚C
–80
–60
–40
–20
0
0.001
0.01
0.1
1
10
Base to emitter resistance RBE (k)
1000
300
100
ICEO — Ta
VCE=–12V
30
10
3
1
0 20 40 60 80 100 120
Ambient temperature Ta (˚C)
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Power Transistors
Area of safe operation (ASO)
–10
ICP
–3
Single pulse
TC=25˚C
–1 IC
t=1ms
– 0.3
– 0.1
1s
– 0.03
– 0.01
– 0.003
– 0.001
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SB968
3



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