AUIRFSL6535 Datasheet PDF - International Rectifier


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AUIRFSL6535
International Rectifier

Part Number AUIRFSL6535
Description Power MOSFET
Page 13 Pages

AUIRFSL6535 datasheet pdf
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AUTOMOTIVE GRADE
AUIRFS6535
AUIRFSL6535
Features
Advanced Process Technology
Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max.
S ID
300V
148m
185m
19A
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient
and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
DD
DS
G
D2Pak
AUIRFS6535
G
Gate
D
Drain
DS
G
TO-262
AUIRFSL6535
S
Source
Base part
number
Package Type
AUIRFSL6535
AUIRFS6535
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Tape and Reel Rightwww.DataSheet.net/
Orderable Part Number
Quantity
50
50
800
800
AUIRFSL6535
AUIRFS6535
AUIRFS6535TRL
AUIRFS6535TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
gRepetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
jRJC
Junction-to-Case
iRJA Junction-to-Ambient (PCB Mount)
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
19
13
100
210
1.4
± 20
216
310
See Fig.12a, 12b, 15, 16
-55 to + 175
300
Typ.
–––
–––
Max.
0.71
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1 www.irf.com © 2012 International Rectifier
July 23, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/



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AUIRFS/SL6535
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
300 ––– –––
V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.39 ––– V/°C Reference to 25°C, ID = 5.0mA
eRDS(on)
Static Drain-to-Source On-Resistance ––– 148 185 mVGS = 10V, ID = 11A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 150μA
gfs Forward Transconductance
15 ––– ––– V VDS = 50V, ID = 11A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 300V, VGS = 0V
––– ––– 250
VDS = 300V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 38 57
ID = 11A
Qgs Gate-to-Source Charge
––– 12 ––– nC VDS = 150V
eQgd
Gate-to-Drain ("Miller") Charge
––– 13 –––
VGS = 10V
td(on) Turn-On Delay Time
––– 15 –––
VDD = 300V
tr Rise Time
––– 16 –––
ID = 11A
td(off) Turn-Off Delay Time
tf Fall Time
e––– 22 ––– ns RG = 5.0
––– 10 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS
Ciss
Cos s
Crs s
Cos s
Cos s
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 7.5 –––
–––
–––
–––
–––
–––
–––
2340
195
40
www.DataSheet.net/
1750
66
130
–––
–––
–––
–––
–––
–––
nH 6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 240V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 240V
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 19
MOSFET symbol
D
––– ––– 100
A showing the
integral reverse
G
––– ––– 1.3
ep-n junction diode.
S
V TJ = 25°C, IS = 11A, VGS = 0V
e––– 190 285 ns TJ = 25°C, IF = 11A, VDD = 150V
––– 990 1485 nC di/dt = 100A/μs
Intrins icturn-on timeis negligible(turn-on is dominatedbyLS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 3.6mH
RG = 50, IAS = 11A, VGS =10V. Part not
recommended for use above this value.
ƒ Pulse width 1.0ms; duty cycle 2%.
„ Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
… Limited by TJmax , see Fig.12a, 12b, 15, 16 for
typical repetitive avalanche performance.
† This value is determined from sample failure
population, starting TJ = 25°C, L = 3.6mH,
RG = 50, IAS = 11A, VGS =10V.
‡ This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
ˆ Ris measured at TJ approximately 90°C.
2 www.irf.com © 2012 International Rectifier
July 23, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/



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AUIRFS/SL6535
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1
0.1
0.01
0.1
5.0V
60μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
5.0V
1
0.1
0.1
60μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
www.DataSheet.net/
100
TJ = 175°C
10
1.0
3
TJ = 25°C
VDS = 50V
60μs PULSE WIDTH
456789
VGS, Gate-to-Source Voltage (V)
20
15 TJ = 25°C
10
5
0
0
TJ = 175°C
VDS = 5.0V
380μs PULSE WIDTH
12345
ID,Drain-to-Source Current (A)
6
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
3 www.irf.com © 2012 International Rectifier
July 23, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/



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AUIRFS/SL6535
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
14.0
12.0
10.0
8.0
ID= 11A
VDS= 240V
VDS= 150V
VDS= 60V
6.0
4.0
2.0
0.0
0
5 10 15 20 25 30 35 40 45 50
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
www.DataSheet.net/
100
TJ = 175°C
10
TJ = 25°C
1.0
0.2
VGS = 0V
0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
1.2
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
1 10msec
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
1 10
DC
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
4 www.irf.com © 2012 International Rectifier
July 23, 2012
Datasheet pdf - http://www.DataSheet4U.co.kr/




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