AUIRFN8459 Datasheet PDF - International Rectifier


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AUIRFN8459
International Rectifier

Part Number AUIRFN8459
Description Dual N-Channel MOSFET
Page 10 Pages

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AUTOMOTIVE GRADE
 
Features
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast swithcing speed and improved repetitive avalanche rating.
These features combine to make this product an extremely
efficient and reliable device for use in Automotive and wide variety
of other applications.
 
Applications
12V Automotive Systems
Brushed DC Motor
Braking
Transmission
AUIRFN8459
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
40V
4.8m
5.9m
70A
50A
 
G
Gate
DUAL PQFN 5X6 mm
D
Drain
S
Source
Base Part Number
Package Type
  
AUIRFN8459
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
 
AUIRFN8459TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
ID @ TC (Bottom) = 25°C
IDM
PD @TC (Bottom) = 25°C
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested)
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
Max.
70
50
50
320
50
0.33
± 20
66
110
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C  
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  AUIRFN8459
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
––– 3.0
––– 45
––– 105 °C/W
––– 80
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
40 ––– –––
––– 0.037 –––
––– 4.8 5.9
2.2 3.0 3.9
66 ––– –––
––– 1.9 –––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 40A
V VDS = VGS, ID = 50µA
S VDS = 10V, ID = 40A

IDSS Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 150
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 40 60
ID = 40A
–––
–––
13
14
–––
–––
nC
VDS = 20V
VGS = 10V
––– 26 –––
ID = 40A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
––– 10 –––
–––
–––
55
25
–––
–––
ns
––– 42 –––
––– 2250 –––
––– 340 –––
––– 215 ––– pF
––– 400 –––
––– 490 –––
   
VDD = 26V
ID = 40A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
 
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
––– ––– 70
A
MOSFET symbol
showing the
ISM
Pulsed Source Current
(Body Diode)
––– ––– 320
A
integral reverse
p-n junction diode.
VSD
dv/dt
trr  
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3 V TJ = 25°C, IS = 40A, VGS = 0V
––– 7.0 ––– V/ns TJ = 175°C, IS= 40A, VDS = 40V
–––
–––
–––
–––
22
23
17
17
–––
–––
–––
–––
ns
TJ = 25°C
TJ = 125°C
nC
TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 40A
di/dt = 100A/µs
––– 1.0 ––– A TJ = 25°C
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1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.3V
1
0.1
0.1
4.3V
60µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
1000
100
TJ = 175°C
10
1
0.1
2.0
TJ = 25°C
VDS = 10V
60µs PULSE WIDTH
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
9.0
Fig. 3 Typical Transfer Characteristics
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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1000
100
AUIRFN8459
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.0V
4.5V
4.3V
10
4.3V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
1.8
ID = 40A
1.6 VGS = 10V
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance vs. Temperature
14
ID= 40A
12
10
VDS= 32V
VDS= 20V
VDS= 8.0V
8
6
4
2
0
0 10 20 30 40 50 60
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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1000
100
TJ = 175°C
10
TJ = 25°C
1
0.1
0.0
VGS = 0V
0.5 1.0 1.5 2.0 2.5
VSD, Source-to-Drain Voltage (V)
3.0
Fig. 7 Typical Source-to-Drain Diode
70
Limited By Package
60
50
40
30
20
10
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
10 20 30
VDS, Drain-to-Source Voltage (V)
40
Fig 11. Typical Coss Stored Energy
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AUIRFN8459
1000
100 100µsec
1msec
10 Limited by
Package
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
DC
0.1
0.1
1
10
VDS, Drain-toSource Voltage (V)
100
Fig 8. Maximum Safe Operating Area
50
Id = 1.0mA
48
46
44
42
40
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to–Source Breakdown Voltage
20.0
16.0
12.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
8.0
4.0
0
50 100 150
ID, Drain Current (A)
200
Fig 12. Typical On-Resistance vs. Drain Current
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