AUIRF952Q Datasheet PDF - Infineon

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AUIRF952Q
Infineon

Part Number AUIRF952Q
Description Dual N and P Channel MOSFET
Page 11 Pages


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AUTOMOTIVE GRADE
AUIRF9952Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Full Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
 
S1
N-CHANNEL MOSFET
18
D1
N-CH P-CH
G1 2
S2 3
V7 D1
DSS
6 D2
30V -30V
G2 4
5 D2 RDS(on) max. 0.10 0.25
P-CHANNEL MOSFET
Top View
ID
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide
variety of other applications.
SO-8
AUIRF9952Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF952Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF9952QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
3.5 -2.3
2.8 -1.8
16 -10
2.0
1.3
0.016
± 20  
44 57
2.0 -1.3
0.25
5.0 -5.0
-55 to + 150
Units
A 
W 
W/°C
V
mJ
A
mJ
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-10-5



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  AUIRF9952Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.015
-0.015
0.08
0.12
0.165
0.290
–––
–––
12
2.4
–––
–––
–––
–––
–––
–––
Max.
–––
–––
–––
–––
0.10
0.15
0.250
0.400
3.0
-3.0
–––
–––
2.0
-2.0
25
-25
± 100
± 100
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.2A

VGS = 4.5V, ID = 1.0A
VGS = -10V, ID = -1.0A
VGS = -4.5V, ID = -0.5A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 3.5A
VDS = -15V, ID = -2.3A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ = 125°C
VDS = -24V,VGS = 0V,TJ = 125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
N-Ch ––– 6.9 14
N-Channel
P-Ch ––– 6.1 12
ID = 1.8A, VDS = 10V,VGS = 10V
N-Ch –––
P-Ch –––
1.0
1.7
2.0
3.4
nC  

P-Channel
Qgd Gate-to-Drain Charge
N-Ch ––– 1.8 3.5
P-Ch ––– 1.1 2.2
ID = -2.3A,VDS = -10V,VGS = -10V
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
6.2
9.7
12
19
N-Channel
VDD = 10V,ID = 1.0A,RG = 6.0
tr Rise Time
td(off) Turn-Off Delay Time
N-Ch ––– 8.8 18
RD = 10
P-Ch ––– 14 28

N-Ch ––– 13 26 ns   P-Channel
P-Ch ––– 20 40
VDD = -10V,ID = -1.0A,RG = 6.0
tf   Fall Time  
N-Ch ––– 3.0 6.0
P-Ch ––– 6.9 14
RD = 10
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-Ch ––– 190 –––
N-Channel
P-Ch ––– 190 –––
VGS = 0V,VDS = 15V,ƒ = 1.0MHz
N-Ch –––
P-Ch –––
120 –––
110 –––
pF  

P-Channel
N-Ch ––– 61 –––
P-Ch ––– 54 –––
VGS = 0V,VDS = -15V,ƒ = 1.0MHz
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr  
ton
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge  
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
N-Ch ––– ––– 1.7
P-Ch ––– ––– -1.3
N-Ch ––– ––– 16
A 
P-Ch ––– ––– -16
N-Ch ––– 0.82 1.2
P-Ch ––– -0.82 -1.2
N-Ch ––– 27 53
P-Ch ––– 27 54
V
TJ = 25°C,IS = 1.25A,VGS = 0V 
TJ = 25°C,IS = -1.25A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 1.25A, di/dt = 100A/µs
N-Ch ––– 28 57
P-Channel
P-Ch ––– 31 62 nC   TJ = 25°C,IF = -1.25A, di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.23)
N-Channel ISD 2.0A, di/dt 100A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.3A, di/dt 84A/µs, VDD V(BR)DSS, TJ 150°C.
   NChannel Starting TJ = 25°C, L = 22mH RG = 25, IAS = 2.0A.(See Figure 12)
PChannel Starting TJ = 25°C, L = 67mH RG = 25, IAS = -1.3A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
2 2015-10-5



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N-Channel
AUIRF9952Q
100 VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
10 TJ = 25°C
TJ = 150°C
VDS = 10V
1
3.0
3.5
4.0
20µs PULSE WIDTH
4.5 5.0 5.5 6.0A
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
10
TJ = 150°C
1
TJ = 25°C
0.1
0.4
VGS = 0V A
0.6 0.8 1.0 1.2 1.4
VSD , Source-to-Drain Voltage (V)
Fig. 4 Typical Source-Drain Diode
Forward Voltage
2015-10-5



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N-Channel
AUIRF9952Q
2.0 ID = 2.2A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
 
0.12
0.10 VGS = 4.5V
0.08
VGS = 10V
0.06
0.04
0
2 4 6 8 10
ID, Drain Current (A)
A
12
Fig 6. Typical On-Resistance Vs. Drain
Current
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
I D = 3.5A
3 6 9 12
VGS , Gate-to-Source Voltage (V)
A
15
Fig. 7 Typical On-Resistance Vs. Gate Voltage
 4
100 I D
TOP
0.89A
1.6A
80
BOTTOM 2.0A
 
60
40
20
0A
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
2015-10-5



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AUIRF952Q Dual N and P Channel MOSFET AUIRF952Q
Infineon
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