AUIRF7379Q Datasheet PDF - Infineon

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AUIRF7379Q
Infineon

Part Number AUIRF7379Q
Description Dual N and P Channel MOSFET
Page 11 Pages


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AUTOMOTIVE GRADE
AUIRF7379Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.038 0.070
G2 4
5 D2
max. 0.045 0.090
P-CHANNEL MOSFET
ID
5.8A -4.3A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
SO-8
AUIRF7379Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7379Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7379QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
30 -30
5.8 -4.3
4.6 -3.4
46 -34
2.5
0.02
± 20  
5.0 -5.0
-55 to + 150
Units
V
A 
W
W/°C
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
50
Units
°C/W
2015-9-30



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  AUIRF7379Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.032
-0.037
0.038
0.055
0.070
0.130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
N-Ch –––
P-Ch –––
–––
–––
Qgs Gate-to-Source Charge
N-Ch –––
P-Ch –––
–––
–––
Qgd Gate-to-Drain Charge
N-Ch –––
P-Ch –––
–––
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
6.8
11
tr Rise Time
N-Ch –––
P-Ch –––
21
17
td(off) Turn-Off Delay Time
N-Ch –––
P-Ch –––
22
25
tf   Fall Time  
N-Ch –––
P-Ch –––
7.7
18
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
4.0
6.0
520
440
180
200
72
93
Diode Characteristics  
Parameter
IS   Continuous Source Current (Body Diode)
ISM  
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
–––
–––
47
53
56
66
Max.
–––
–––
–––
–––
0.045
0.075
0.090
0.180
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
± 100
25
25
2.9
2.9
7.9
9.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A

VGS = 4.5V, ID = 4.9A
VGS = -10V, ID = -4.3A
VGS = -4.5V, ID = -3.7A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ = 125°C
VDS = -24V,VGS = 0V,TJ = 125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
N-Channel
ID = 2.4A, VDS = 24V,VGS = 10V
nC  

P-Channel
ID = -1.8A,VDS = -24V,VGS = -10V
N-Channel
VDD = 15V,ID = 2.4A,RG = 6.0
RD = 6.2

ns   P-Channel
VDD = -15V,ID = -1.8A,RG = 6.0
RD = 8.2
Between lead,6mm (0.25in.)from
nH  
Package and center of die contact
N-Channel
VGS = 0V,VDS = 25V,ƒ = 1.0MHz
pF  

P-Channel
VGS = 0V,VDS = -25V,ƒ = 1.0MHz
Units
Conditions
A 
V
TJ = 25°C,IS = 1.8A,VGS = 0V 
TJ = 25°C,IS = -1.8A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 2.4A, di/dt = 100A/µs
nC
P-Channel
TJ = 25°C,IF = -1.8A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t 10sec.
2 2015-9-30



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N-Channel
AUIRF7379Q
1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1
10 100
VDS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
VDS = 15V
10
4
5
6
20µs PULSE WIDTH
7 8 9 10A
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
10
TJ = 150°C TJ = 25°C
1
0.1
0.0
VGS = 0V A
0.5 1.0 1.5 2.0 2.5
VSD , Source-to-Drain Voltage (V)
Fig. 4 Typical Source-Drain Diode
Forward Voltage
2015-9-30



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N-Channel
AUIRF7379Q
2.0 ID = 4.0A
1.5
1.0
0.5
0.0
-60
VGS = 10V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
 
Fig 6. Typical On-Resistance Vs. Drain
Current
 
Fig. 7 Typical On-Resistance Vs. Gate Voltage
  4 2015-9-30



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