AUIRF7319Q Datasheet PDF - Infineon

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AUIRF7319Q
Infineon

Part Number AUIRF7319Q
Description Dual N and P Channel MOSFET
Page 11 Pages


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AUTOMOTIVE GRADE
AUIRF7319Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Surface Mount
Fully Avalanche Rated
Lead-Free, RoHS Compliant
Automotive Qualified *
  N-CHANNEL MOSFET
N-CH P-CH
S1 1
G1 2
8 D1
7 D1
VDSS
30V -30V
S2 3
6 D2 RDS(on) typ. 0.023 0.042
G2 4
5 D2
max. 0.029 0.058
P-CHANNEL MOSFET
ID
6.5A -4.9A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
Base part number
AUIRF7319Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
SO-8
AUIRF7319Q
D
Drain
S
Source
Orderable Part Number
AUIRF7319QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
EAS
IAR
EAR
VGS
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
30
P-Channel
-30
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140 
4.0 -2.8
0.20
± 20  
5.0 -5.0
-55 to + 150
Units
V
A 
W
mJ
A
mJ
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30



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  AUIRF7319Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.022
-0.022
0.023
0.032
0.042
0.076
–––
–––
14
7.7
–––
–––
–––
–––
–––
–––
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
N-Ch –––
P-Ch –––
22
23
Qgs Gate-to-Source Charge
N-Ch –––
P-Ch –––
2.6
3.8
Qgd Gate-to-Drain Charge
N-Ch –––
P-Ch –––
6.4
5.9
td(on) Turn-On Delay Time
N-Ch –––
P-Ch –––
8.1
13
tr Rise Time
N-Ch –––
P-Ch –––
8.9
13
td(off) Turn-Off Delay Time
N-Ch –––
P-Ch –––
26
34
tf Fall Time
N-Ch –––
P-Ch –––
17
32
Ciss Input Capacitance
N-Ch –––
P-Ch –––
650
710
Coss Output Capacitance
N-Ch –––
P-Ch –––
320
380
Crss Reverse Transfer Capacitance
N-Ch –––
P-Ch
130
180
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.78
-0.78
45
44
58
42
Max.
–––
–––
–––
–––
0.029
0.046
0.058
0.098
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
± 100
33
34
3.9
5.7
9.6
8.9
12
19
13
20
39
51
26
48
–––
–––
–––
–––
–––
–––
Max.
2.5
-2.5
30
-30
1.0
-1.0
68
66
87
63
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A

VGS = 4.5V, ID = 4.7A
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 5.8A
VDS = -15V, ID = -4.9A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ = 55°C
VDS = -24V,VGS = 0V,TJ = 55°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
N-Channel
ID = 5.8A, VDS = 15V,VGS = 10V
nC  

P-Channel
ID = -4.9A,VDS = -15V,VGS = -10V
N-Channel
VDD = 15V,ID = 1.0A,RG = 6.0
RD = 15
ns  

P-Channel
VDD = -15V,ID = -1.0A,RG = 6.0
RD = 15
N-Channel
VGS = 0V,VDS = 25V,ƒ = 1.0MHz
pF  

P-Channel
VGS = 0V,VDS = -25V,ƒ = 1.0MHz
Units
Conditions
A 
V
TJ = 25°C,IS = 1.7A,VGS = 0V 
TJ = 25°C,IS = -1.7A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 1.7A, di/dt = 100A/µs
nC
P-Channel
TJ = 25°C,IF = -1.7A, di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 22)
N-Channel ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C
N-Channel Starting TJ = 25°C, L = 10mH, RG = 25, IAS = 4.0A. (See Fig. 12)
P-Channel Starting TJ = 25°C, L = 35mH, RG = 25, IAS = -2.8A.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
2 2015-9-30



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N-Channel
AUIRF7319Q
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
V DS , Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1
10
VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0A
VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig. 4 Typical Source-Drain Diode
Forward Voltage
2015-9-30



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N-Channel
AUIRF7319Q
2.0 ID = 5.8A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
 
 
 
Fig 6. Typical On-Resistance Vs. Drain
Current
 
Fig. 7 Typical On-Resistance Vs. Gate Voltage
 4
 
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
2015-9-30



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