AUIRF7316Q Datasheet PDF - Infineon

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AUIRF7316Q
Infineon

Part Number AUIRF7316Q
Description Dual P Channel MOSFET
Page 8 Pages


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AUTOMOTIVE GRADE
AUIRF7316Q
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free, RoHS Compliant
Automotive Qualified *
  S1
G1
S2
G2
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
G
Gate
VDSS
RDS(on) typ.
max.
ID
SO-8
AUIRF7316Q
D
Drain
-30V
0.042
0.058
-4.9A
S
Source
Base part number
AUIRF7316Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7316QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @TA = 25°C
PD @TA = 70°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Units
V
A 
W
V
mJ
A
mJ
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
Max.
62.5
Units
°C/W
1 2015-9-30



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  AUIRF7316Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-30 ––– ––– V VGS = 0V, ID = -250µA
––– 0.022 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.042 0.058
––– 0.076 0.098

VGS
VGS
= -10V, ID = -4.9A
= -4.5V, ID = -3.6A
-1.0 ––– -3.0 V VDS = VGS, ID = -250µA
––– 7.7 ––– S VDS = -15V, ID = -4.9A
–––
–––
–––
–––
-1.0
-25
µA
VDS = -24V, VGS = 0V
VDS = -24V,VGS = 0V,TJ =55°C
–––
–––
––– -100
––– 100
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 23 34
ID = -4.9A
––– 3.8 5.7 nC   VDS = -15V
––– 5.9 8.9
VGS = -10V, See Fig.10
––– 13 19
VDD = -15V
–––
–––
13
34
20
51
ns
ID = -1.0A
RG = 6.0
––– 32 48
RD = 15
––– 710 –––
VGS = 0V
––– 380 ––– pF   VDS = -25V
––– 180 –––
ƒ = 1.0MHz, See Fig.5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
-0.78
44
42
Max. Units
Conditions
-2.5
-30
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
-1.0 V TJ = 25°C,IS = -1.7A,VGS = 0V 
66 ns TJ = 25°C ,IF = -1.7A,
63 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 35mH, RG = 25, IAS = -2.8A.
ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
Surface mounted on FR-4 board , t sec.
2 2015-9-30



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100 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
-VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
AUIRF7316Q
100 VGS
TOP - 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
10
-3.0V
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
-VDS, Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
V DS = -10V
1
3.0
3.5
4.0
20µs PULSE WIDTH
4.5 5.0 5.5 6.0A
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
100
TJ = 150°C
10
TJ = 25°C
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
Fig. 4 Typical Source-Drain Diode
Forward Voltage
2015-9-30



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2.0 ID = 4.9A
1.5
1.0
0.5
0.0 VGS = 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C)
Fig 5. Normalized On-Resistance
Vs. Temperature
AUIRF7316Q
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig. 7 Typical On-Resistance Vs. Gate Voltage
 4
300 ID
TOP -1.3A
250 -2.2A
BOTTOM -2.8A
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
2015-9-30



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