AUIRF7309Q Datasheet PDF - Infineon

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AUIRF7309Q
Infineon

Part Number AUIRF7309Q
Description Dual N and P Channel MOSFET
Page 12 Pages


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Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dual N and P Channel MOSFET
Dynamic dv/dt Rating
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7309Q
 
S1
G1
N-CHANNEL MOSFET
18
27
D1
D1
VDSS
N-CH
30V
P-CH
-30V
S2 3
G2 4
6 D2
5 D2 RDS(on) max. 0.05 0.10
P-CHANNEL MOSFET
Top View
ID
4.7A -3.5A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7309Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7309Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7309QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
4.7 -3.5
4.0 -3.0
3.2 -2.4
16 -12
1.4
0.011
± 20
6.9 -6.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient ( PCB Mount, steady state)
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
Max.
90
Units
°C/W
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  AUIRF7309Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
Min.
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.032
-0.037
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
–––
–––
–––
–––
0.050
0.080
0.10
0.16
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
± 100
Units
Conditions
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 2.4A 

VGS = 4.5V, ID = 2.0A 
VGS = -10V, ID = -1.8A 
VGS = -4.5V, ID = -1.5A 
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
S
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS =24V, VGS = 0V
µA  
VDS = -24V,VGS = 0V 
VDS =24V, VGS = 0V ,TJ =125°C
VDS = -24V,VGS = 0V,TJ =125°C  
nA
 
VGS = ± 20V  
VGS = ± 20V  
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
N-Ch ––– ––– 25
N-Channel
P-Ch ––– ––– 25
ID = 2.6A, VDS = 16V,VGS = 4.5V
N-Ch –––
P-Ch –––
–––
–––
2.9
2.9
nC  

P-Channel
Qgd Gate-to-Drain Charge
N-Ch ––– ––– 7.9
P-Ch ––– ––– 9.0
ID = -2.2A,VDS = -16V,VGS = -4.5V
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
N-Ch ––– 6.8 –––
N-Channel
P-Ch ––– 11 –––
VDD = 10V,ID = 2.6A,RG = 6.0
N-Ch ––– 21 –––
RD = 3.8
P-Ch –––
N-Ch –––
17
22
–––
–––
ns   P-Channel
P-Ch ––– 25 –––
N-Ch ––– 7.7 –––
P-Ch ––– 18 –––
VDD = -10V,ID = -2.2A,RG = 6.0
RD = 4.5
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
N-P ––– 4.0 –––
Between lead, 6mm(0.25n) from
N-P ––– 6.0 ––– nH   package and center of die contact
N-Ch ––– 520 –––
N-Channel
P-Ch ––– 440 –––
VGS = 0V,VDS = 15V,ƒ = 1.0MHz
N-Ch –––
P-Ch –––
180 –––
200 –––
pF  

P-Channel
N-Ch ––– 72 –––
P-Ch
93 –––
VGS = 0V,VDS = -15V,ƒ = 1.0MHz
Diode Characteristics  
IS  
ISM  
VSD
trr
Qrr
ton
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
N-Ch ––– ––– 1.8
P-Ch ––– ––– -1.8
N-Ch ––– ––– 16
A 
P-Ch ––– ––– -12
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
––– 1.0
––– -1.0
47 71
53 80
V
TJ = 25°C,IS = 1.8A,VGS = 0V 
TJ = 25°C,IS = -1.8A,VGS = 0V 
ns
N-Channel
TJ = 25°C ,IF = 2.6A, di/dt = 100A/µs 
N-Ch –––
P-Ch
56
66
84
99
nC
P-Channel
TJ = 25°C,IF = -2.2A, di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23)
N-Channel ISD 2.4A, di/dt 73A/µs, VDD V(BR)DSS, TJ 150°C.
P-Channel ISD -1.8A, di/dt 90A/µs, VDD V(BR)DSS, TJ 150°C
Pulse width 300µs; duty cycle 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
2
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N-Channel
AUIRF7309Q
Fig. 1 Typical Output Characteristics
TJ = 25°C
Fig. 2 Typical Output Characteristics
TJ = 150°C
Fig. 3 Typical Transfer Characteristics
3
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30



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N-Channel
AUIRF7309Q
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
Fig 8. Maximum Safe Operating Area
2015-9-30



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