AUIRF7304Q Datasheet PDF - Infineon

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AUIRF7304Q
Infineon

Part Number AUIRF7304Q
Description Dual P Channel MOSFET
Page 9 Pages


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Features
Advanced Planar Technology
Low On-Resistance
Dual P Channel MOSFET
Dynamic dv/dt Rating
Logic Level
150°C Operating Temperature
Fast Switching
Lead-Free, RoHS Compliant
Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7304Q
  S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
HEXFET® Power MOSFET
VDSS
-20V
RDS(on) max.
ID
0.090
-4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7304Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7304Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7304QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
-5.0
-55 to + 150
Units
A 
W
W°/C
V
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-16



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  AUIRF7304Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-20 ––– ––– V VGS = 0V, ID = -250µA
––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
–––
–––
––– 0.090
––– 0.140

VGS
VGS
= -4.5V, ID
= -2.7V, ID
= -2.2A
= -1.8A
-0.70 ––– -1.5 V VDS = VGS, ID = -250µA
4.0 ––– ––– S VDS = -16V, ID = -2.2A
–––
–––
–––
–––
-1.0
-25
µA
VDS = - 16V, VGS = 0V
VDS = -16V,VGS = 0V,TJ =125°C
–––
–––
––– -100
––– 100
nA
VGS = -12V
VGS = 12V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– ––– 22
ID = -2.2A
––– ––– 3.3 nC   VDS = -16V
––– ––– 9.0
VGS = -4.5V, See Fig.6 & 12
––– 8.4 –––
VDD = -10V
–––
–––
26
51
–––
–––
ns  
ID = -2.2A
RG = 6.0
––– 33 –––
RD = 4.5See Fig.10
–––
–––
4.0
6.0
–––
–––
Between lead,
nH
 
6mm (0.25in.)
from package
and center of die contact
––– 610 –––
VGS = 0V
––– 310 ––– pF   VDS = -15V
––– 170 –––
ƒ = 1.0MHz, See Fig.5
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Min.
–––
–––
Typ.
–––
–––
Max. Units
Conditions
-2.5
-17
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– -1.0 V TJ = 25°C,IS = -1.8A,VGS = 0V 
––– 56 84 ns TJ = 25°C ,IF = -2.2A,
––– 71 110 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)
ISD -2.2A, di/dt 50A/µs, VDD V(BR)DSS, TJ 150°C.
Pulse width 300µs; duty cycle 2%.
When mounted on 1 inch square copper board , t sec.
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100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
0.1
0.01
20µs PULSE WIDTH
TJ = 25°C
A
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig. 1 Typical Output Characteristics
AUIRF7304Q
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1 -1.5V
0.1
0.01
20µs PULSE WIDTH
TJ = 150°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig. 2 Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
1
0.1
1.5
VDS = -15V
20µs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0A
-VGS , Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
3
2.0 ID = -3.6A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig. 4 Normalized On-Resistance
Vs. Temperature
2015-11-16



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1500
1000
500
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
AUIRF7304Q
10 I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0A
0 5 10 15 20 25
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10 TJ = 150°C
TJ = 25°C
1
0.1
0.3
VGS = 0V A
0.6 0.9 1.2 1.5
-VSD , Source-to-Drain Voltage (V)
Fig. 7 Typical Source-Drain Diode
Forward Voltage
 4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
1ms
TA
TJ
=
=
25° C
150° C
Single Pulse
1
1
10ms
10
-VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
2015-11-16



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