AUIRF7303Q Datasheet PDF - Infineon

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AUIRF7303Q
Infineon

Part Number AUIRF7303Q
Description Dual N Channel MOSFET
Page 8 Pages


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AUTOMOTIVE GRADE
AUIRF7303Q
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
  S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on) max.
ID
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7303Q
G
Gate
D
Drain
30V
0.05
5.3A
S
Source
Base part number
AUIRF7303Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7303QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
EAS (Tested)
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Thermally Limited)
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
5.3
4.4
44
2.4
0.02
± 20
414
1160
1.6
-55 to + 175
Units
A
W
W/°C
V
mJ
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJA Junction-to-Ambient
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30



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  AUIRF7303Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
–––
–––
0.05
0.08
m
VGS
VGS
=
=
10V, ID = 2.7A
4.5V, ID = 2.1A
1.0 ––– 3.0 V VDS = VGS, ID = 100µA
5.6 ––– ––– S VDS = 15V, ID = 2.7A
––– ––– 1.0
––– ––– 25
µA
VDS = 24V, VGS = 0V
VDS = 24V,VGS = 0V,TJ = 125°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 14 21
ID = 2.7A
––– 1.5 2.3 nC   VDS = 15V
––– 4.4 6.6
VGS = 10V
––– 2.9 –––
VDD = 15V
–––
–––
6.2
15
–––
–––
ns
ID = 2.7A
RG = 6.8
––– 7.8 –––
VGS = 10V
––– 515 –––
VGS = 0V
––– 217 ––– pF   VDS = 25V
––– 90 –––
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
26
50
Max. Units
Conditions
3.0
44
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
1.0 V TJ = 25°C,IS = 2.7A,VGS = 0V 
39 ns TJ = 25°C ,IF = 2.7A,
75 nC di/dt = 100A/µs 
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, Starting TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A VGS =10V. Part not recommended for use above this value.
ISD 2.7A, di/dt 389A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
This value determined from sample failure population, TJ = 25°C, L = 118mH, RG = 50, IAS = 2.7A, VGS =10V.
Surface mounted on FR-4 board, t 10sec.
2 2015-9-30



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100
10
1
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
0.1 2.5V
0.01
0.1
60µs PULSE WIDTH Tj = 25°C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
100
VDS = 15V
60µs PULSE WIDTH
10
T J = 175°C
1
T J = 25°C
100
10
TOP
BOTTOM
VGS
15V
10V
7.0V
4.5V
3.5V
3.0V
2.8V
2.5V
AUIRF7303Q
1 2.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 175°C
1 10
V DS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
2.0
ID = 5.3A
VGS = 10V
1.5
1.0
0.1
1234567
VGS, Gate-to-Source Voltage (V)
Fig. 3 Typical Transfer Characteristics
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = C gs + C gd, C ds SHORTED
Crss = C gd
Coss = C ds + C gd
Ciss
Coss
Crss
10
1
10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
0.5
-60
-20 20 60 100 140
TJ , Junction Temperature (°C)
180
Fig. 4 Normalized On-Resistance vs. Temperature
14.0
12.0
10.0
8.0
ID= 2.7A
VDS = 24V
VDS = 15V
VDS= 6.0V
6.0
4.0
2.0
0.0
0
5 10 15
QG, Total Gate Charge (nC)
20
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
2015-9-30



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  AUIRF7303Q
100
10 TJ = 175°C
1 TJ = 25°C
0.1
0.3
VGS = 0V
0.5 0.7 0.9 1.1 1.3 1.5 1.7
VSD, Source-to-Drain Voltage (V)
Fig. 7 Typical Source-to-Drain Diode Forward Voltage
1000
100
10
1
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µs
1ms
10ms
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.10 1
DC
10
VDS, Drain-to-Source Voltage (V)
100
Fig 8. Maximum Safe Operating Area
6
5
4
3
2
1
0
25
50 75 100 125 150
TA , Ambient Temperature (°C)
175
Fig 9. Maximum Drain Current vs. Case Temperature
1800
1600
1400
1200
ID
TOP 0.9A
1.4A
BOTTOM 2.7A
1000
800
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 10. Maximum Avalanche Energy vs. Drain Current
100
D = 0.50
10 0.20
0.10
0.05
1
0.02
0.01
0.1
 4
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
2015-9-30



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