AUIRF7103Q Datasheet PDF - International Rectifier

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AUIRF7103Q
International Rectifier

Part Number AUIRF7103Q
Description Power MOSFET
Page 13 Pages


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Features
l Advanced Planar Technology
l Dual N Channel MOSFET
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Lead-Free, RoHS Compliant
l Automotive Qualified*
AUTOMOTIVE GRADE
AUIRF7103Q
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
V(BR)DSS
RDS(on) max.
ID
50V
130m
3.0A
Description
Specifically designed for Automotive applications,
this cellular design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit com-
bined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are
well known for, provides the designer with an ex-
tremely efficient and reliable device for use in Auto-
motive and a wide variety of other applications.
SO-8
AUIRF7103Q
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
ePower Dissipation
Linear Derating Factor
Gate-to-Source Voltage
fSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
hRepetitive Avalanche Energy
gPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RJL Junction-to-Drain Lead
fgRJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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AUIRF7103Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage 50 ––– ––– V VGS = 0V, ID = 250μA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.057 –––
––– ––– 130
––– ––– 200
V/°C Reference to 25°C, ID = 1mA
ddm
VGS = 10V, ID = 3.0A
VGS = 4.5V, ID = 1.5A
VGS(th)
Gate Threshold Voltage
1.0 ––– 3.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance
3.4 ––– ––– S VDS = 15V, ID = 3.0A
IDSS
Drain-to-Source Leakage Current
––– ––– 2.0
––– ––– 25
μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
––– -100
––– 100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg Total Gate Charge
––– 10 15
ID = 2.0A
Qgs Gate-to-Source Charge
––– 1.2 ––– nC VDS = 40V
Qgd
Gate-to-Drain ("Miller") Charge
––– 2.8 –––
VGS = 10V
td(on) Turn-On Delay Time
––– 5.1 –––
VDD = 25V
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
d–––
–––
1.7
15
–––
–––
ns
ID = 1.0A
RG = 6.0
––– 2.3 –––
RD = 25
Ciss Input Capacitance
––– 255 –––
VGS = 0V
Coss Output Capacitance
––– 69 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 29 –––
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ÙISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 3.0
––– ––– 12
––– ––– 1.2
––– 35 53
––– 45 67
MOSFET symbol
D
A
showing the
integral reverse
G
p-n junction diode.
S
dV TJ = 25°C, IS = 1.5A, VGS = 0V
dns TJ = 25°C,IF = 1.5A
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Pulse width 400μs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Figure 12).
… ISD 2.0A, di/dt 155A/μs, VDD V(BR)DSS, TJ 175°C.
† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive avalanche performance.
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AUIRF7103Q
Qualification Information
Qualification Level
Automotive
(per AEC-Q101) ††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level
Machine Model
Human Body Model
ESD
Charged Device
Model
RoHS Compliant
SO-8
MSL1
Class M1A (+/- 50V)†††
AEC-Q101-002
Class H0 (+/- 250V)†††
AEC-Q101-001
Class C5 (+/- 1125V)†††
AEC-Q101-005
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage.
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AUIRF7103Q
100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
1
4.5V
1
0.1
20μs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
0.1
0.1
20μs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
TJ = 175°C
TJ = 25°C
1.00
3.0
VDS = 25V
20μs PULSE WIDTH
6.0 9.0 12.0
VGS, Gate-to-Source Voltage (V)
15.0
2.5 ID = 3.0A
2.0
1.5
1.0
0.5
0.0 VGS= 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
4
December 5, 2012
Fig 4. Normalized On-Resistance
Vs. Temperature
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