AUIRF7103Q Datasheet PDF - Infineon

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AUIRF7103Q
Infineon

Part Number AUIRF7103Q
Description Dual N Channel MOSFET
Page 11 Pages


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AUTOMOTIVE GRADE
AUIRF7103Q
Features
Advanced Planar Technology
Dual N Channel MOSFET
Low On-Resistance
Logic Level Gate Drive
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
  S1
G1
S2
G2
1
2
3
4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS
RDS(on) max.
ID
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7103Q
G
Gate
D
Drain
50V
130m
3.0A
S
Source
Base part number
AUIRF7103Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7103QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.19,20, 16b, 16c
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C 
Thermal Resistance  
Symbol
Parameter
RJL Junction-to-Drain Lead
RJA Junction-to-Ambient 
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1 2015-9-30



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  AUIRF7103Q
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
50 ––– ––– V VGS = 0V, ID = 250µA
––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
–––
–––
–––
–––
130
200
mVVGGSS
=
=
10V, ID = 3.0A 
4.5V, ID = 1.5A 
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
3.4 ––– ––– S VDS = 15V, ID = 3.0A
––– ––– 2.0
––– ––– 25
µA
VDS =40V, VGS = 0V
VDS = 40V,VGS = 0V,TJ =55°C
–––
–––
––– 100
––– -100
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain Charge
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics  
––– 10 15
ID = 2.0A
––– 1.2 ––– nC   VDS = 40V
––– 2.8 –––
VGS = 10V
––– 5.1 –––
VDD = 25V
–––
–––
1.7
15
–––
–––
ns
ID = 1.0A
RG = 6.0
––– 2.3 –––
RD = 25
––– 255 –––
VGS = 0V
––– 69 ––– pF   VDS = 25V
––– 29 –––
ƒ = 1.0MHz
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 3.0
––– ––– 12
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
––– ––– 1.2 V TJ = 25°C,IS = 1.5A,VGS = 0V 
––– 35 53 ns TJ = 25°C ,IF = 1.5A,
––– 45 67 nC di/dt = 100A/µs 
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
Surface mounted on 1" in square Cu board.
Starting TJ = 25°C, L = 4.9mH, RG = 25, IAS = 3.0A. (See Fig. 12)
ISD 2.0A, di/dt 155A/µs, VDD V(BR)DSS, TJ 175°C.
Limited by TJmax , see Fig.16b, 16c, 19, 20 for typical repetitive avalanche performance.
2 2015-9-30



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100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
Tj = 25°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 1 Typical Output Characteristics
AUIRF7103Q
100 VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
10
5.0V
BOTTOM 4.5V
4.5V
1
0.1
0.1
20µs PULSE WIDTH
Tj = 175°C
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig. 2 Typical Output Characteristics
100.00
10.00
TJ = 175°C
TJ = 25°C
1.00
3.0
VDS = 25V
20µs PULSE WIDTH
6.0 9.0 12.0
VGS, Gate-to-Source Voltage (V)
15.0
Fig. 3 Typical Transfer Characteristics
3
2.5 ID = 3.0A
2.0
1.5
1.0
0.5
0.0 V GS= 10V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, Junction Temperature ( °C)
Fig. 4 Normalized On-Resistance
vs. Temperature
2015-9-30



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10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
AUIRF7103Q
12 ID = 2.0A
9
VDS
VDS
VDS
= 40V
= 25V
= 10V
6
3
0
036
QG, Total Gate Charge (nC)
9
12
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
 4
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
1 100µsec
1msec
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
01
10msec
10 100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
2015-9-30



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