ATF-55143 Datasheet PDF - AVAGO

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ATF-55143
AVAGO

Part Number ATF-55143
Description Low Noise Enhancement Mode Pseudomorphic HEMT
Page 20 Pages


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ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-55143 is a high dynamic range,
very low noise, single supply E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS hand-
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“5F” = Device Code
“x” = Date code character identifies month of manufacture.
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise figure
Excellent uniformity in product specifications
400 micron gate width
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead Free Option Available
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise figure
17.7 dB associated gain
Lead-free option available
Applications
Low noise amplifier for cellular/PCS handsets
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-PHEMT for other ultra low
noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.



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ATF-55143 Absolute Maximum Ratings[1]
Symbol
Parameter
V
DS
V
GS
V
GD
I
DS
I
GS
P
diss
Pin max.
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage [2]
Drain Current[2]
Gate Current[5]
Total Power Dissipation [3]
RF Input Power[5]
(Vds=2.7V, Ids=10mA)
(Vds=0V, Ids=0mA)
T Channel Temperature
CH
T Storage Temperature
STG
jc Thermal Resistance [4]
ESD (Human Body Model)
ESD (Machine Model)
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 4.3 mW/°C for T > 87°C.
L
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. Device can safely handle +10 dBm RF Input Power as long as I is
GS
limited to 1 mA. I at P drive level is bias circuit dependent. See
GS 1dB
applications section for additional information.
Units
V
V
V
mA
mA
mW
Absolute
Maximum
5
-5 to 1
-5 to 1
100
1
270
dBm
dBm
°C
°C
°C/W
V
V
70
60
10
10
150
-65 to 150
235
200
25
0.7 V
50
40 0.6V
30
20 0.5V
10
0
0 12 3 4
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
5
0.4 V
0.3V
67
Product Consistency Distribution Charts [6,7]
300 200
Cpk = 2.02
Cpk = 1.023
250
Stdev = 0.36
Stdev = 0.28
160
240
200
200
-3 Std
150
100
160
120
-3 Std
+3 Std
120
+3 Std
80
80
50 40 40
Cpk = 3.64
Stdev = 0.031
0
22 23 24 25
OIP3 (dBm)
Figure 2. OIP3 @ 2.7 V, 10 mA.
LSL = 22.0, Nominal = 24.2
26
0
15 16 17 18 19
GAIN (dB)
Figure 3. Gain @ 2.7 V, 10 mA.
USL = 18.5, LSL = 15.5, Nominal = 17.7
0
0.43 0.53 0.63 0.73 0.83 0.93
NF (dB)
Figure 4. NF @ 2.7 V, 10 mA.
USL = 0.9, Nominal = 0.6
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2



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ATF-55143 Electrical Specifications
T = 25°C, RF parameters measured in a test circuit for a typical device
A
Symbol Parameter and Test Condition
Units
Vgs Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
Vth Threshold Voltage
Vds = 2.7V, Ids = 2 mA
Idss Saturated Drain Current
Vds = 2.7V, Vgs = 0V
Gm Transconductance
Vds = 2.7V, gm = Idss/Vgs;
Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current
Vgd = Vgs = -2.7V
NF Noise Figure [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
Ga
Associated Gain [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
OIP3
Output 3rd Order
Intercept Point [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
P1dB
1dB Compressed
Output Power [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
V
V
μA
mmho
μA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.3
0.18
110
15.5
22.0
Typ.[2]
0.47
0.37
0.1
220
0.6
0.3
17.7
21.6
24.2
22.3
14.4
14.2
Max.
0.65
0.53
3
285
95
0.9
18.5
Input
50 Ohm
Input
Output
50 Ohm
Output
Transmission
Matching Circuit
Matching Circuit
Transmission
Line Including
Γ_mag = 0.4
DUT Γ_mag = 0.5
Line Including
Gate Bias T
Γ_ang = 83°
Γ_ang = -26°
Drain Bias T
(0.3 dB loss)
(0.3 dB loss)
(1.2 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between
an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
3



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ATF-55143 Typical Performance Curves
30 1.2
25
20
15
10
2V, 10 mA
2.7V, 10 mA
5
012 3 456
FREQUENCY (GHz)
Figure 6. Gain vs. Bias over Frequency.[1]
1.0
0.8
0.6
0.4
0.2
2V, 10 mA
2.7V, 10 mA
0
012 3 456
FREQUENCY (GHz)
Figure 7. Fmin vs. Frequency and Bias.
27
25
23
21
19
17
2V, 10 mA
2.7V, 10 mA
15
012 3 456
FREQUENCY (GHz)
Figure 8. OIP3 vs. Bias over Frequency.[1]
15
10
5
0
2V, 10 mA
2.7V, 10 mA
-5
012 3 456
FREQUENCY (GHz)
Figure 9. IIP3 vs. Bias over Frequency.[1]
16
14
12
10
2V, 10 mA
2.7V, 10 mA
8
012 3 456
FREQUENCY (GHz)
Figure 10. P1dB vs. Bias over Frequency.[1,2]
21
20
19
18
17
2V
16 2.7V
3V
15
0 5 10 15 20 25 30 35
Ids (mA)
Figure 11. Gain vs. Ids and Vds at 2 GHz.[1]
0.60
0.55
0.50
0.45
0.40
0.35
0.30 2V
2.7V
0.25 3V
0.20
0 5 10 15 20 25 30 35
Ids (mA)
Figure 12. Fmin vs. Ids and Vds at 2 GHz.
35
33
31
29
27
25
23 2V
2.7V
21 3V
19
0 5 10 15 20 25 30 35
Ids (mA)
Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1]
16
14
12
10
8
6
4 2V
2.7V
2 3V
0
0 5 10 15 20 25 30 35
Ids (mA)
Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1]
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class
dsq
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS dsq d
as a P1dB of +14.5 dBm is approached.
4



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Related : Start with ATF-5514 Part Numbers by
ATF-55143 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package ATF-55143
Agilent(Hewlett-Packard)
ATF-55143 pdf
ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT ATF-55143
AVAGO
ATF-55143 pdf

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