ATF-55143 Datasheet PDF - AVAGO

No Preview Available ! ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Avago Technologies’ ATF-55143 is a high dynamic range, very low noise, single supply E-PHEMT housed in a 4-lead SC-70 (SOT-343) surface mount plastic package. The combination of high gain, high linearity and low noise makes the ATF-55143 ideal for cellular/PCS hand- sets, wireless data systems (WLL/RLL, WLAN and MMDS) and other systems in the 450 MHz to 6 GHz frequency range. Surface Mount Package SOT-343 Pin Connections and Package Marking DRAIN SOURCE SOURCE GATE Note: Top View. Package marking provides orientation and identification “5F” = Device Code “x” = Date code character identifies month of manufacture. Features  High linearity performance  Single Supply Enhancement Mode Technology[1]  Very low noise figure  Excellent uniformity in product specifications  400 micron gate width  Low cost surface mount small plastic package SOT- 343 (4 lead SC-70)  Tape-and-Reel packaging option available  Lead Free Option Available Specifications  2 GHz; 2.7V, 10 mA (Typ.)  24.2 dBm output 3rd order intercept  14.4 dBm output power at 1 dB gain compression  0.6 dB noise figure  17.7 dB associated gain  Lead-free option available Applications  Low noise amplifier for cellular/PCS handsets  LNA for WLAN, WLL/RLL and MMDS applications  General purpose discrete E-PHEMT for other ultra low noise applications Note: 1. Enhancement mode technology requires positive Vgs, thereby eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 0) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.

No Preview Available ! ATF-55143 Absolute Maximum Ratings[1] Symbol Parameter V DS V GS V GD I DS I GS P diss Pin max. Drain-Source Voltage[2] Gate-Source Voltage[2] Gate Drain Voltage [2] Drain Current[2] Gate Current[5] Total Power Dissipation [3] RF Input Power[5] (Vds=2.7V, Ids=10mA) (Vds=0V, Ids=0mA) T Channel Temperature CH T Storage Temperature STG jc Thermal Resistance [4]  ESD (Human Body Model)  ESD (Machine Model) Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Source lead temperature is 25°C. Derate 4.3 mW/°C for T > 87°C. L 4. Thermal resistance measured using 150°C Liquid Crystal Measure- ment method. 5. Device can safely handle +10 dBm RF Input Power as long as I is GS limited to 1 mA. I at P drive level is bias circuit dependent. See GS 1dB applications section for additional information. Units V V V mA mA mW Absolute Maximum 5 -5 to 1 -5 to 1 100 1 270 dBm dBm °C °C °C/W V V 70 60 10 10 150 -65 to 150 235 200 25 0.7 V 50 40 0.6V 30 20 0.5V 10 0 0 12 3 4 VDS (V) Figure 1. Typical I-V Curves. (VGS = 0.1 V per step) 5 0.4 V 0.3V 67 Product Consistency Distribution Charts [6,7] 300 200 Cpk = 2.02 Cpk = 1.023 250 Stdev = 0.36 Stdev = 0.28 160 240 200 200 -3 Std 150 100 160 120 -3 Std +3 Std 120 +3 Std 80 80 50 40 40 Cpk = 3.64 Stdev = 0.031 0 22 23 24 25 OIP3 (dBm) Figure 2. OIP3 @ 2.7 V, 10 mA. LSL = 22.0, Nominal = 24.2 26 0 15 16 17 18 19 GAIN (dB) Figure 3. Gain @ 2.7 V, 10 mA. USL = 18.5, LSL = 15.5, Nominal = 17.7 0 0.43 0.53 0.63 0.73 0.83 0.93 NF (dB) Figure 4. NF @ 2.7 V, 10 mA. USL = 0.9, Nominal = 0.6 Notes: 6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2

No Preview Available ! ATF-55143 Electrical Specifications T = 25°C, RF parameters measured in a test circuit for a typical device A Symbol Parameter and Test Condition Units Vgs Operational Gate Voltage Vds = 2.7V, Ids = 10 mA Vth Threshold Voltage Vds = 2.7V, Ids = 2 mA Idss Saturated Drain Current Vds = 2.7V, Vgs = 0V Gm Transconductance Vds = 2.7V, gm = Idss/Vgs; Vgs = 0.75 – 0.7 = 0.05V Igss Gate Leakage Current Vgd = Vgs = -2.7V NF Noise Figure [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA f = 900 MHz Vds = 2.7V, Ids = 10 mA Ga Associated Gain [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA f = 900 MHz Vds = 2.7V, Ids = 10 mA OIP3 Output 3rd Order Intercept Point [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA f = 900 MHz Vds = 2.7V, Ids = 10 mA P1dB 1dB Compressed Output Power [1] f = 2 GHz Vds = 2.7V, Ids = 10 mA f = 900 MHz Vds = 2.7V, Ids = 10 mA Notes: 1. Measurements obtained using production test board described in Figure 5. 2. Typical values determined from a sample size of 500 parts from 6 wafers. V V μA mmho μA dB dB dB dB dBm dBm dBm dBm Min. 0.3 0.18 — 110 — — — 15.5 — 22.0 — — — Typ.[2] 0.47 0.37 0.1 220 — 0.6 0.3 17.7 21.6 24.2 22.3 14.4 14.2 Max. 0.65 0.53 3 285 95 0.9 — 18.5 — — — — — Input 50 Ohm Input Output 50 Ohm Output Transmission Matching Circuit Matching Circuit Transmission Line Including Γ_mag = 0.4 DUT Γ_mag = 0.5 Line Including Gate Bias T Γ_ang = 83° Γ_ang = -26° Drain Bias T (0.3 dB loss) (0.3 dB loss) (1.2 dB loss) (0.3 dB loss) Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements. 3

No Preview Available ! ATF-55143 Typical Performance Curves 30 1.2 25 20 15 10 2V, 10 mA 2.7V, 10 mA 5 012 3 456 FREQUENCY (GHz) Figure 6. Gain vs. Bias over Frequency.[1] 1.0 0.8 0.6 0.4 0.2 2V, 10 mA 2.7V, 10 mA 0 012 3 456 FREQUENCY (GHz) Figure 7. Fmin vs. Frequency and Bias. 27 25 23 21 19 17 2V, 10 mA 2.7V, 10 mA 15 012 3 456 FREQUENCY (GHz) Figure 8. OIP3 vs. Bias over Frequency.[1] 15 10 5 0 2V, 10 mA 2.7V, 10 mA -5 012 3 456 FREQUENCY (GHz) Figure 9. IIP3 vs. Bias over Frequency.[1] 16 14 12 10 2V, 10 mA 2.7V, 10 mA 8 012 3 456 FREQUENCY (GHz) Figure 10. P1dB vs. Bias over Frequency.[1,2] 21 20 19 18 17 2V 16 2.7V 3V 15 0 5 10 15 20 25 30 35 Ids (mA) Figure 11. Gain vs. Ids and Vds at 2 GHz.[1] 0.60 0.55 0.50 0.45 0.40 0.35 0.30 2V 2.7V 0.25 3V 0.20 0 5 10 15 20 25 30 35 Ids (mA) Figure 12. Fmin vs. Ids and Vds at 2 GHz. 35 33 31 29 27 25 23 2V 2.7V 21 3V 19 0 5 10 15 20 25 30 35 Ids (mA) Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1] 16 14 12 10 8 6 4 2V 2.7V 2 3V 0 0 5 10 15 20 25 30 35 Ids (mA) Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1] Notes: 1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements. 2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached, dsq the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class dsq B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA DS dsq d as a P1dB of +14.5 dBm is approached. 4

Download PDF

View PDF for Mobile

Related : Start with ATF-5514 Part Numbers by

ATF-55143	Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package	Agilent(Hewlett-Packard)
ATF-55143	Low Noise Enhancement Mode Pseudomorphic HEMT	AVAGO

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others. Since 2010   ::   HOME   ::   Contact