ATF-541M4 Datasheet PDF - AVAGO


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ATF-541M4
AVAGO

Part Number ATF-541M4
Description Low Noise Enhancement Mode Pseudomorphic HEMT
Page 16 Pages

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ATF-541M4
Low Noise Enhancement Mode ­Pseudomorphic HEMT
in a ­Miniature Leadless Package
Data Sheet
Description
Avago Technologies’ ­ ATF­‑541M4 is a high linearity, low
noise, single supply E‑PHEMT housed in a miniature lead‑
less package.
The ATF-541M4’s small size and low profile makes it ideal
for the design of hybrid module and other space-con‑
straint devices.
The device can be used in applications such as TMA and
front end LNA for Cellular/PCS and WCDMA base stations,
LNA and driver amplifiers for Wireless Data and 802.11b
WLAN.
In addition, the device’s superior RF performance at higher
frequency makes it an ideal candidate for high frequency
applications such as WLL, 802.11a WLAN, 5–6 GHz UNII
and HIPERLAN applications.
MiniPak 1.4 mm x 1.2 mm Package
Rx
Pin Connections and Package Marking
Source
Pin 3
Gate
Pin 2
Rx
Drain
Pin 4
Source
Pin 1
Features
• High linearity performance
• Single Supply Enhancement Mode Technology[1]
• Very low noise figure
• Excellent uniformity in product specifications
• 800 micron gate width
• Miniature leadless package
1.4 mm x 1.2 mm x 0.7 mm
• Tape-and-Reel packaging option available
Specifications
2 GHz; 3V, 60 mA (Typ.)
• 35.8 dBm output 3rd order intercept
• 21.4 dBm output power at 1 dB gain compression
• 0.5 dB noise figure
• 17.5 dB associated gain
Applications
• Low Noise Amplifier and Driver Amplifier for Cellular/
PCS and WCDMA Base Stations
• LNA and Driver Amplifier for WLAN, WLL/RLL and
MMDS applications
• General purpose discrete E-PHEMT for ultra low noise
applications in the 450 MHz to 10 GHz frequency range
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Note:
Top View. Package marking provides orientation, product identifica‑
tion and date code.
“R” = Device Type Code
“x” = Date code character. A different character is assigned for each
month and year.



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ATF-541M4 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute
Maximum
VDS
VGS
VGD
IDS
IGS
P
diss
Pin max.
TCH
TSTG
θjc
Drain-Source Voltage[2]
Gate-Source Voltage[2]
Gate Drain Voltage [2]
Drain Current[2]
Gate Current[5]
Total Power Dissipation [3]
RF Input Power[5]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
V 5
V -5 to +1
V 5
mA 120
mA 2
mW 360
dBm
20
°C 150
°C -65 to 150
°C/W
212
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate
4.7 mW/°C for TL > 74°C.
4. Thermal resistance measured using
150°C Liquid Crystal Measurement
method.
5. The device can handle +20 dBm RF Input
Power provided IGS is limited to 2 mA. IGS at
P1dB drive level is bias circuit dependent. See
applications section for additional informa‑
tion.
120
0.7 V
100
0.6 V
80
60
0.5 V
40
20
0
0 12 3 4
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
5
0.4 V
0.3 V
67
Product Consistency Distribution Charts [6,7]
320
Cpk = 0.85
Stdev = 1.14
240
320
240
-3 Std
160
160
Cpk = 1.16
Stdev = 0.30
-3 Std
+3 Std
300
250
200
150
Cpk = 1.72
Stdev = 0.072
+3 Std
80 80
100
50
0
29 32 35
38
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 35.82
41
0
15 16 17 18 19 20
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
LSL = 15.5, Nominal = 17.5, USL = 18.5
0
0.3 0.5 0.7 0.9
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
Nominal = 0.5, USL = 0.9
1.1
Notes:
6. Distribution data sample size is 500 samples taken from 6 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been de-embedded from actual measurements.




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ATF-541M4 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Vgs
Operational Gate Voltage Vds = 3V, Ids = 60 mA
V
0.4 0.58 0.75
Vth
Threshold Voltage Vds = 3V, Ids = 4 mA
V
0.18 0.36 0.52
Idss Saturated Drain Current Vds = 3V, Vgs = 0V µA — 0.28 5
Gm
Transconductance Vds = 3V, gm = Idss/Vgs; mmho
230
398
560
Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -3V
µA — — 200
NF
Noise Figure [1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dB ­
dB
— 0.5 0.9
— 0.5 —
Gain
Gain[1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dB
dB
15.5 17.5 18.5
— 18.1 —
OIP3
Output 3rd Order
f = 2 GHz
Intercept Point[1]
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
dBm
33
35.8 —
35.9 —
P1dB
1dB Compressed
f = 2 GHz
Output Power[1]
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
dBm
dBm
21.4 —
22.1 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.11
Γ_ang = 141
(0.5 dB loss)
Output
Matching Circuit
DUT Γ_mag = 0.314
Γ_ang = -167
(0.5 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and OIP3 measurements. This circuit ­represents a trade-off between an opti-
mal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-embedded from actual measurements.
Symbol
Parameter and Test Condition
Units Min. Typ. Max.
Fmin
Minimum Noise Figure [2] f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB ­
dB
dB
dB
— 0.16 —
— 0.46 —
— 0.8 —
— 1.17 —
Ga Associated Gain[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dB
dB
dB
dB
— 22.4 —
— 18.7 —
— 14.5 —
— 11.9 —
OIP3
Output 3rd Order
Intercept Point[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
dB
dB
35 —
35.1 —
36.6 —
37.6 —
P1dB
1dB Compressed
Output Power[3]
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 3V, Ids = 60 mA
Vds = 4V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
dBm
dBm
dB
dB
19.5 —
20.8 —
20.4 —
19.4 —
Notes:
2. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different im‑
pedances using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application
section for more information.
3. P1dB and OIP3 measurements made in an InterContinental Microwave (ICM) test fixture with double stub tuners and bias tees. The input was
tuned for minimum noise figure and the output was tuned for maximum OIP3.




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ATF-541M4 Typical Performance Curves
0.60
0.55
0.50
0.45
0.40
0.35
0
20 40
60 80 100
Id (mA)
Figure 6. Fmin vs. Ids at 2 GHz, Vds = 3V[1]
40
Gain
OIP3
35 P1dB
30
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0
20 40
60 80 100
Id (mA)
Figure 7. Fmin vs. Ids at 900 MHz, Vds = 3V[1]
2.5
2.0
1.5
40
Gain
35 OIP3
P1dB
30
25
20
15
10
0 20 40 60 80 100
Ids (mA)
Figure 8. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 2 GHz,
Vds = 3V[2].
30
25
40 mA
60 mA
80 mA
20
25 1.0
15
20
15
0 20 40 60 80 100
Id (mA)
Figure 9. Gain, OIP3 & P1dB vs. Ids Tuned
for Max OIP3 and Min NF at 900 MHz,
Vds = 3V[3].
0.5
80 mA
60 mA
40 mA
0
0 2 4 6 8 10 12
FREQUENCY (GHz)
Figure 10. Fmin vs. Frequency vs. Ids,
Vds = 3V[1].
10
5
0 2 4 6 8 10
FREQUENCY (GHz)
Figure 11. Ga vs. Frequency vs. Ids,
Vds = 3V[1].
12
Notes:
1. Fmin and associated gain at minimum noise figure (Ga) values are based on a set of 16 noise figure measurements made at 16 different im‑
pedances using an ATN NP5 test system. From these measurements a true Fmin and Ga is calculated. Refer to the noise parameter application
section for more information.
2. Measurements obtained using production test board described in Figure 5.
3. Input tuned for minimum NF and the output tuned for maximum OIP3 using an InterContinental Microwave (ICM) test fixture, double stub
tuners and bias tees.





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