ATF-511P8 Datasheet PDF - AVAGO

www.Datasheet-PDF.com

ATF-511P8
AVAGO

Part Number ATF-511P8
Description High Linearity Enhancement Mode Pseudomorphic HEMT
Page 15 Pages


ATF-511P8 datasheet pdf
Download PDF
ATF-511P8 pdf
View PDF for Mobile

No Preview Available !

ATF-511P8
High Linearity Enhancement Mode[1] Pseudomorphic HEMT
in 2x2 mm2 LPCC[3] Package
Data Sheet
Description
Avago Technologies’s ATF-511P8 is a single-voltage high
linearity, low noise E-pHEMT housed in an 8-lead JEDEC-
standard leadless plastic chip carrier (LPCC[3]) package.
The device is ideal as a high linearity, low-noise, medium-
power amplifier. Its operating frequency range is from 50
MHz to 6 GHz.
The thermally efficient package measures only 2 mm
x 2 mm x 0.75 mm. Its backside metalization provides
excellent thermal dissipation as well as visual evidence
of solder reflow. The device has a Point MTTF of over 300
years at a mounting temperature of +85°C. All devices
are 100% RF & DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Conforms to JEDEC reference outline MO229 for DRP-N.
4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC
bias power.
Pin Connections and Package Marking
Pin 8
Pin 7 (Drain)
Pin 6
Pin 5
Pin 1 (Source)
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
Bottom View
Pin 1 (Source)
Pin 8
Pin 2 (Gate)
Pin 3
Pin 4 (Source)
1Px
Top View
Pin 7 (Drain)
Pin 6
Pin 5
Note:
Package marking provides orientation and identification:
“1P” = Device Code
“x” = Date code indicates the month of manufacture.
Features
Single voltage operation
High linearity and P1dB
Low noise figure
Excellent uniformity in product specifications
Small package size:
2.0 x 2.0 x 0.75 mm
Point MTTF > 300 years[2]
MSL-1 and lead-free
Tape-and-reel packaging option available
Specifications
2 GHz; 4.5V, 200 mA (Typ.)
41.7 dBm output IP3
30 dBm output power at 1 dB gain compression
1.4 dB noise figure
14.8 dB gain
12.1 dB LFOM[4]
69% PAE
Applications
Front-end LNA Q2 and Q3 driver or pre-driver amplifier
for Cellular/PCS and WCDMA wireless infrastructure
Driver amplifier for WLAN, WLL/RLL and MMDS
applications
General purpose discrete E-pHEMT for other high
linearity applications



No Preview Available !

ATF-511P8 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin max.
TCH
TSTG
ch_b
Parameter
Drain–Source Voltage[2]
Gate–Source Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Gate Current
Total Power Dissipation[3]
RF Input Power[4]
Channel Temperature
Storage Temperature
Thermal Resistance[5]
Units
V
V
V
A
mA
W
dBm
°C
°C
°C/W
Absolute
Maximum
7
-5 to 1
-5 to 1
1
46
3
+30
150
-65 to 150
33
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is
25°C. Derate 30 mW/°C for TB > 50°C.
4. With 10 Ohm series resistor in gate supply
and 3:1 VSWR.
5. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
6. Device can safely handle +30dBm RF Input
Power provided IGS limited to 46mA. IGS at
P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4.5V, 200 mA[6,7]
1000
0.8 V
900
800 0.7 V
700
600
500
0.6 V
400
300
200
0.5 V
100
0
02
468
VDS (V)
Figure 1. Typical I-V Curves (Vgs = 0.1 per step).
240
Cpk = 1.66
200 Stdev = 0.6
160
-3 Std
+3 Std
120
80
40
0
35 38
41 44 47
OIP3 (dBm)
Figure 2. OIP3 LSL = 38.5, Nominal = 41.7.
200
Cpk = 3.24
160 Stdev = 0.15
120
-3 Std
+3 Std
80
40
0
28 29
30 31
P1dB (dBm)
Figure 3. P1dB LSL = 28.5, Nominal = 30.
150
Cpk = 1.4
120 Stdev = 0.31
90
-3 Std
60
+3 Std
30
0
13 14
15
GAIN (dB)
Figure 4. Gain LSL = 13.5,
Nominal = 14.8, USL = 16.5.
16
17
160
Cpk = 3.03
Stdev = 1.85
120
-3 Std
+3 Std
80
40
0
52 57 62 67 72 77 82
PAE (%)
Figure 5. PAE LSL = 52, Nominal = 68.9.
Notes:
6. Distribution data sample size is 400 samples taken from 4 different
wafers and 3 different lots. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
7. Measurements are made on production test board, which represents
a trade-off between optimal OIP3, P1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
2



No Preview Available !

ATF-511P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
G
OIP3
P1dB
PAE
ACLR
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure[1]
Gain[1]
Output 3rd Order Intercept Point[1,2]
Output 1dB Compressed[1]
Power Added Efficiency
Adjacent Channel Leakage
Power Ratio[1,3]
Vds = 4.5V, Ids = 200 mA
Vds = 4.5V, Ids = 32 mA
Vds = 4.5V, Vgs = 0V
Vds = 4.5V, Gm = Idss/Vgs;
Vgs = Vgs1– Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Vds = 0V, Vgs = -4.5V
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Offset BW = 5 MHz
Offset BW = 10 MHz
Units Min. Typ. Max.
V 0.25 0.51 0.8
V — 0.28 —
μA — 16.4 —
mmho
2178 —
μA -27 -2 —
dB — 1.4 —
dB — 1.2 —
dB 13.5 14.8 16.5
dB — 17.8 —
dBm 38.5 41.7 —
dBm — 43
dBm 28.5 30
dBm — 29.6 —
% 52 68.9 —
% — 68.6 —
dBc — -58.9 —
dBc — -62.7 —
Notes:
1. Measurements obtained using production test board described in Figure 6 and PAE tested at P1dB condition.
2. I ) 2 GHz OIP3 test condition: F1 = 2.0 GHz, F2 = 2.01 GHz and Pin = -5 dBm per tone.
II ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 910 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
4. Use proper bias, board, heatsink and derating designs to ensure maximum channel temperature is not exceeded. See absolute maximum
ratings and application note for more details.
Input
50 Ohm
Transmission
Line and
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.69
Γ_ang = -164°
(1.1 dB loss)
Output
Matching Circuit
DUT Γ_mag = 0.65
Γ_ang = -163°
(0.9 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-
off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3



No Preview Available !

RF Input
1.8 nH
1.2 pF
50 Ohm
.02 λ
110 Ohm
.03 λ
15 nH
15 Ohm
DUT
2.2 μF
Gate
DC Supply
110 Ohm 50 Ohm
.03 λ .02 λ
2.7 nH
1.2 pF
47 nH
2.2 μF
Drain
DC Supply
RF Output
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate
supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V, 200 mA quiesent bias:
Optimum OIP3
Freq Gamma Source
(GHz) Mag Ang
0.9 0.776 152
2.0 0.872 -171
2.4 0.893 -162
3.9 0.765 -132
Gamma Load
Mag Ang
0.549 -178
0.683 -179
0.715 -174
0.574 -144
OIP3
(dBm)
43.3
43.1
42.8
41.7
Gain P1dB
(dB) (dBm)
17.94 29.63
15.06 30.12
14.03 29.90
9.47 29.02
Optimum P1dB
Freq Gamma Source
(GHz) Mag Ang
0.9 0.773 153
2.0 0.691 147
2.4 0.797 164
3.9 0.602 -163
Gamma Load
Mag Ang
0.784 -173
0.841 -166
0.827 -166
0.794 -155
OIP3
(dBm)
38.0
36.4
36.2
35.4
Gain P1dB
(dB) (dBm)
19.28 31.9
10.34 31.4
8.43 31.2
7.03 31
PAE
(%)
63.8
66.8
64.5
52
PAE
(%)
54.23
38.15
37.38
32.72
4



ATF-511P8 datasheet pdf
Download PDF
ATF-511P8 pdf
View PDF for Mobile


Related : Start with ATF-511P Part Numbers by
ATF-511P8 Enhancement Mode Pseudomorphic HEMT ATF-511P8
Agilent
ATF-511P8 pdf
ATF-511P8 High Linearity Enhancement Mode Pseudomorphic HEMT ATF-511P8
AVAGO
ATF-511P8 pdf

Index :   0   1   2   3   4   5   6   7   8   9   A   B   C   D   E   F   G   H   I   J   K   L   M   N   O   P   Q   R   S   T   U   V   W   X   Y   Z   

This is a individually operated, non profit site. If this site is good enough to show, please introduce this site to others.
Since 2010   ::   HOME   ::   Contact