ATF-50189 Datasheet PDF - AVAGO


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ATF-50189
AVAGO

Part Number ATF-50189
Description Enhancement Mode Pseudomorphic HEMT
Page 21 Pages

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ATF-50189
Enhancement Mode[1] Pseudomorphic HEMT in
SOT 89 Package
Data Sheet
Description
Avago Technologies’s ATF-50189 is a high linearity,
medium power, low noise E-pHEMT FET packaged in
a low cost surface mount SOT89[3] package. The com-
bination of low noise figure and high output IP3 at
the same bias point makes it ideal for receiver and
transmitter application. Its operating frequency range
is from 400 MHz to 3.9 GHz.
Features
• High Linearity and P1dB
• Low Noise Figure
• Excellent uniformity in product specifications
• SOT 89 standard package
• Point MTTF > 300 years[2]
The ATF-50189 is ideally suited for Cellular/PCS and
WCDMA wireless infrastructure, WLAN, WLL and
MMDS application, and general purpose discrete
E-pHEMT amplifiers which require high linearity and
power. All devices are 100% RF and DC tested.
Notes:
1. Enhancement mode technology employs a single positive Vgs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data
3. Conform to JEDEC reference outline MO229 for DRP-N
4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.
• MSL-1 and lead-free
• Tape-and-Reel packaging option available
Specifications
2 GH, 4.5V, 280 mA (Typ.)
• 45 dBm Output IP3
• 29 dBm Output Power at 1dB gain compression
• 1.1 dB Noise Figure
• 15.5 dB Gain
Pin Connections and Package Marking
• 62% PAE at P1dB
• LFOM[4] 14 dB
OGX
GSD
Top View
Applications
• Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier
for Cellular/PCS and WCDMA wireless infrastructure
• Driver Amplifier for WLAN, WLL/RLL and MMDS
applications
• General purpose discrete E-pHEMT for other high linearity
applications
DSG
Bottom View
Notes:
Package marking provides orientation and
identification:
“0G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1C)
Refer to Avago Application Note A004R: Electrostatic Discharge
Damage and Control.



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ATF-50189 Absolute Maximum Ratings[1]
Symbol
VDS
VGS
VGD
IDS
IGS
Pdiss
Pin
TCH
TSTG
Parameter
DrainSource Voltage[2]
GateSource Voltage[2]
Gate Drain Voltage[2]
Drain Current[2]
Gate Current
Total Power Dissipation[3]
RF Input Power
Channel Temperature
Storage Temperature
Units
V
V
V
A
mA
W
dBm
°C
°C
Absolute
Maximum
7
-5 to 0.8
-5 to 1
1
12
2.25
30
150
-65 to 150
Thermal Resistance[2,4]
θch_b = 29°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperature TB is 25°C.
Derate 35 mW/°C for TB > 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
ATF-50189 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified.
Symbol Parameter and Test Condition
Units
Min.
Typ.
Max.
Vgs Operational Gate Voltage
Vds = 4.5V, Ids = 280 mA
V
0.37 0.53 0.72
Vth Threshold Voltage
Vds = 4.5V, Ids = 32 mA
V
0.38
Idss Saturated Drain Current
Vds = 4.5V, Vgs = 0V
µA 4.1
Gm Transconductance
Vds = 4.5V, Gm = Ids/Vgs;
Vgs = Vgs1 Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
mmho
175
2294
Igss Gate Leakage Current
Vds = 0V, Vgs = -4.5V
µA 13.8 60
NF Noise Figure[1]
f = 2 GHz
f = 900 MHz
dB 1.1
dB 1.0
G Gain [1]
f = 2 GHz
f = 900 MHz
dB 14 15.5 17
dB 21.5
OIP3
Output 3rd Order Intercept Point [1,2]
f = 2 GHz
f = 900 MHz
dBm 43 45
dBm 44
P1dB
Output Power at 1dB Compression Point[1]
f = 2 GHz
f = 900 MHz
dBm 27
dBm
29
28.5
PAE Power Added Efficiency[1] at P1dB
f = 2 GHz
f = 900 MHz
% 45 62
% 49
ACLR
Adjacent Channel Leakage
Power Ratio[1,3]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc 60.0
dBc 67.8
Notes:
1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners.
2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone.
ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone.
3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
- Test Model 1
- Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
- Freq = 2140 MHz
- Pin = -5 dBm
- Channel Integrate Bandwidth = 3.84 MHz
2



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Input
Input
Matching
Circuit
Γ_mag=0.80
Γ_ang=-136.6°
(0.9 dB loss)
DUT
Output
Matching
Circuit
Γ_mag=0.62
Γ_ang=-163°
(0.9 dB loss)
Output
Figure 1. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB, PAE
and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, P1dB and
VSWR. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts [1,2]
150
Stdev=0.37
120
180
Stdev=0.20
150
90
3 Std
60
+3 Std
120
3 Std
90
60
30 30
+3 Std
0
43 44 45 46 47
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4.5V/280 mA.
LSL = 43.0, Nominal = 45.4
0
28 28.5 29 29.5 30
P1dB (dBm)
Figure 3. P1dB @ 2 GHz, 4.5V/280 mA.
LSL = 27.0, Nominal = 29.0
300
Stdev=0.16
250
200
3 Std
150
100
50
+3 Std
150
Stdev=1.94
120
90
3 Std
60
30
+3 Std
0
14 14.5 15 15.5 16 16.5 17
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4.5V/200 mA.
LSL = 14.0, Nominal = 15.5, USL = 17.0
0
54 58 62 66 70
PAE (%)
Figure 5. PAE at P1dB @ 2 GHz, 4.5V/200 mA.
LSL = 45.0, Nominal = 62.0
Notes:
1. Distribution data sample size is 500 samples taken from 5 different wafers. Future wafers allocated
to this product may have nominal values anywhere between the upper and lower limits.
2. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3



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Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
280 mA quiesent bias.
Typical Gammas at Optimum OIP3[1]
Freq
(GHz)
0.45
0.9
1.8
2
2.4
3.5
Gamma Source
Mag Ang (deg)
0.47 121.7
0.81 -157.5
0.82 -110.4
0.85 -106.4
0.82 -88.8
0.77 -49.6
Optimum OIP3
Gamma Load
OIP3
Mag Ang (deg)
(dBm)
0.76 -175.1
0.72 -178.1
0.62 -135.1
0.64 -127.4
0.67 -113.6
0.59 -79.5
41.0
44.2
46.5
46.2
45.6
44.0
Gain
(dB)
22.0
21.6
16.0
15.1
13.0
8.6
P1dB
(dBm)
27.5
28.3
28.7
29.0
28.9
26.9
PAE
(%)
39.0
49.2
61.3
63.0
55.0
35.0
Typical Gammas at Optimum P1dB [1]
Freq
(GHz)
Gamma Source
Mag Ang (deg)
Optimum P1dB
Gamma Load
OIP3
Mag Ang (deg)
(dBm)
Gain
(dB)
0.45 0.52 151.2
0.71 -177.5
39.8 23.9
0.9
0.79 -160.1
0.67 -158.3
42.8 20.1
1.8
0.83 -112.5
0.72 -131.2
44.2 15.9
2
0.82 -102.1
0.69 -117.5
44.8 14.9
2.4
0.78 -91.2
0.77 -105.3
44.44
12.5
3.5 0.78 -49.7 0.72 -74.6
43.7 8.7
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
P1dB
(dBm)
28.5
30.4
30.3
30.2
30.2
27.3
PAE
(%)
44.8
56
60.3
58.6
54.1
32
Typical IV Curve
1000
900
Vgs=0.8V
800
Vgs=0.7V
700
600
500
400 Vgs=0.6V
300 Vgs=0.54V
200 Vgs=0.5V
100
Vgs=0.4V
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
Vds (V)
Figure 6. Typical IV curve.
4




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