AT-32063 Datasheet PDF - AVAGO

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AT-32063
AVAGO

Part Number AT-32063
Description High Performance NPN Silicon Bipolar Transistor
Page 8 Pages


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AT-32063
Low Current, High Performance NPN Silicon Bipolar Transistor
Data Sheet
Description
The AT-32063 contains two high performance NPN bipolar
transistors in a single SOT-363 package. The devices are
unconnected, allowing flexibility in design. The pin-out
is convenient for cascode amplifier designs. The SOT-363
package is an industry standard plastic surface mount
package.
The 3.2 micron emitter-to-emitter pitch and reduced
parasitic design of the transistor yields extremely high
performance products that can perform a multiplicity
of tasks. The 20 emitter finger interdigitated geometry
yields a transistor that is easy to match to and extremely
fast, with moderate power, low noise resistance, and low
operating currents.
Optimized performance at 2.7 V makes this device ideal
for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated
systems as an LNA, gain stage, buffer, oscillator, or active
mixer. Typical amplifier designs at 900 MHz yield 1.3 dB
noise figures with 12 dB or more associated gain at a 2.7
V, 5 mA bias, with noise performance being relatively
insensitive to input match. High gain capability at 1 V, 1
mA makes this device a good fit for 900 MHz pager ap-
plications. Voltage breakdowns are high enough for use
at 5 volts.
The AT-3 series bipolar transistors are fabricated using
aSnelfo-Apltiigmniezded-Trvaenrssiisotnoro(fSAATv)agporo’sce1s0s G. THhzefdt i,e3a0reGnHiztrfidmaex
passivated for surface protection. Excellent device unifor-
mity, performance and reliability are produced by the use
of ion-implantation, self-alignment techniques, and gold
metallization in the fabrication of these devices.
Features
High Performance Bipolar Transistor Optimized for
Low Current, Low Voltage Operation
900 MHz Performance: 1.1 dB NF, 14.5 dB GA
Characterized for End-of-Life Battery Use (2.7 V)
SOT-363 (SC-70) Plastic Package
Tape-and-Reel Packaging Option Available
Lead-free
Surface Mount Package
SOT-363 (SC-70)
Pin Connections and Package Marking
1
B1
2
E1
3
C2
6
C1
5
E2
4
B2



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AT-32063 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation[2,3]
Junction Temperature
Storage Temperature
V
V
V
mA
mW
°C
°C
Absolute
Maximum
1.5
11
5.5
32
150
150
-65 to 150
Thermal Resistance[2]:
θjc = 370°C/W
Notes:
1. Permanent damage may occur if any
of these limits are exceeded.
2. TMounting Surface = 25°C.
3. Derate at 2.7 mW/°C for TC > 94.5°C.
4. 150 mW per device.
Electrical Specifications, TA = 25°C
Symbol Parameters and Test Conditions
Units Min. Typ. Max.
NF Noise Figure; VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz dB 1.1[2]
GA Associated Gain; VCE = 2.7 V, IC = 5 mA
f = 0.9 GHz
dB 12.5[2] 14.5[2]
hFE Forward Current Transfer Ratio; VCE = 2.7 V, IC = 5 mA
— 50
ICBO Collector Cutoff Current; VCB = 3 V
µA
IEBO Noise Figure; VEB = 1 V
µA
Notes:
1. All data is per individual transistor.
2. Test circuit, Figure 1. Numbers reflect device performance de-embedded from circuit losses. Input loss = 0.2 dB; output loss = 0.3 dB.
1.4[2]
270
0.2
1.5
50
W = 10
L = 450
TEST CIRCUIT
BOARD MATERIAL = 0.047 GETEK (e = 4.3)
W = 20
L = 60
W = 10
L = 100
DIMENSIONS IN MILS
NOT TO SCALE
Figure 1. Test circuit for Noise Figure and Associated Gain.
This circuit is a compromise match between best noise figure, best gain,
stability, and a practical synthesizable match.
50




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AT-32063 Characterization Information, TA = 25°C
Symbol
Parameters and Test Conditions
P1 dB
G1 dB
IP3
Power at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
Gain at 1 dB Gain Compression (opt tuning); VCE = 2.7 V, IC = 20 mA
Output Third Order Intercept Point (opt tuning); VCE = 2.7 V, IC = 20 mA
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
Units
dBm
dB
dBm
Typ.
12
16
24
Typical Performance, TA = 25°C
2.00
1.50
1.00
0.50
0
0.9
2.7V/2 mA
2.7V/5 mA
2.7V/20 mA
1.8
2.4
FREQUENCY (GHz)
Figure 2. Minimum Noise Figure vs. Frequency and
Current at VCE = 2.7 V.
20.0
15.0
10.0
5.0
2.7V/2 mA
2.7V/5 mA
0 2.7V/20 mA
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 3. Associated Gain at Optimum Noise Match
vs. Frequency and Current at VCE = 2.7 V.
15
14
13
12
11
10
0.9
1.8
2.4
FREQUENCY (GHz)
Figure 4. Power at 1 dB Gain Compression vs. Frequency
at VCE = 2.7 V and IC = 20 mA.
18
15
12
9
6
3
0
0.9 1.8
2.4
FREQUENCY (GHz)
Figure 5. 1 dB Compressed Gain vs. Frequency at VCE =
2.7 V and IC = 20 mA.
25
20
15
10
2 mA
5 5 mA
10 mA
0 20 mA
0 0.5 1.0 1.5 2.0 2.5
FREQUENCY (GHz)
Figure 6. Third Order Intercept vs. Frequency and Bias at
VCE = 2.7 V, with Optimal Tuning.




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AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 1 V, IC = 1 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.98 -11
0.86 -50
0.72 -82
0.69 -88
0.58 -119
0.52 -134
0.49 -145
0.45 -165
0.41 166
0.42 124
0.47 93
dB
11.36
10.14
8.39
7.87
5.87
4.83
4.3
3.16
1.84
0.17
-1.15
S21
Mag
3.7
3.21
2.63
2.48
1.97
1.74
1.64
1.44
1.24
1.02
0.88
S12
Ang dB Mag
171 -34.77 0.02
138 -22.02 0.08
113 -18.97 0.11
108 -18.61 0.12
85 -17.8
0.13
74 -17.72 0.13
67 -17.69 0.13
55 -17.68 0.13
39 -16.99 0.14
16 -13.67 0.21
-2 -9.84 0.32
Ang
83
59
43
41
31
28
28
30
37
45
38
S22
Mag Ang
0.99 -4
0.91 -20
0.82 -31
0.8 -32
0.73 -41
0.7 -45
0.68 -48
0.67 -54
0.64 -63
0.6 -81
0.54 -107
25
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 1 V, IC = 1 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
Ang.
0.9
0.71
10.4 0.76
50
0.44
1.8
1.37
8.3 0.60 112 0.24
2.4
1.80
7.2 0.50 155 0.10
20
MSG
15
10 MAG
5
S21
0
MSG
-5
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 7. Gain vs. Frequency at VCE = 1 V, IC = 1 mA.
AT-32063 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, VCE = 2.7 V, IC = 2 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S11
Mag Ang
0.96 -12
0.77 -55
0.59 -87
0.55 -93
0.42 -121
0.37 -135
0.34 -145
0.29 -164
0.26 167
0.28 124
0.33 94
dB
16.46
14.73
12.37
11.74
9.26
8.01
7.35
6.05
4.54
2.73
1.36
S21
Mag
6.66
5.45
4.15
3.86
2.90
2.52
2.33
2.01
1.69
1.37
1.17
S12
Ang dB Mag Ang
169 -37.32 0.014 82
132 -25.13 0.055 59
107 -22.42 0.076 48
103 -22.07 0.079 47
83 -20.79 0.091 44
73 -20.13 0.099 45
67 -19.67 0.104 46
56 -18.68 0.116 48
41 -16.95 0.142 50
20 -13.75 0.205 48
1 -10.70 0.292 41
S22
Mag Ang
0.98 -5
0.87 -21
0.76 -29
0.74 -30
0.69 -36
0.67 -39
0.66 -41
0.65 -46
0.64 -53
0.61 -68
0.57 -89
AT-32063 Typical Noise Parameters
Common Emitter, Zo = 50 Ω, VCE = 2.7 V, IC = 2 mA
F req.FGmHinGz AGoptRn
dB
dB Mag.
0.9 0.78 14.3 0.65
1.8 1.25 10.7 0.45
2.4
1.57
9.1 0.35
Ang.
50
105
145
0.31
0.20
0.13

30
25
20 MSG
15
MAG
10 MSG
5 S21
0
0.1 1.1 2.1
3.1 4.1
5.1
FREQUENCY (GHz)
Figure 8. Gain vs. Frequency at VCE = 2.7 V, IC = 2 mA.



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