AR1107S36 Datasheet PDF - Power Semiconductors

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AR1107S36
Power Semiconductors

Part Number AR1107S36
Description RECTIFIER DIODE
Page 4 Pages


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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
nov 02 - ISSUE : 05
Symbol Characteristic
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
AR1107
Repetitive voltage up to
Mean forward current
Surge current
Conditions
V=VRRM
3600 V
1215 A
13.4 kA
Tj
[°C]
Value
Unit
150 3600
150 3700
150 50
V
V
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1800 A
1215
A
1095
A
150 13.4
kA
898 x 1E3 A²s
25 1.60
V
150 0.73
V
150 0.463
mohm
SWITCHING
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
µs
150 µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR1107 S 36
standard specification
VRRM/100
37 °C/kW
7 °C/kW
-30 / 150
°C
11.8 / 13.2 kN
300 g



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AR1107 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
150
140
130
120
110
100
90
80
70
60
50
0
PF(AV) [W]
3000
2500
2000
1500
1000
500
0
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60°
90° 120
°
180°
500 1000
IF(AV) [A]
DC
1500
2000
120°
90°
60°
180°
30°
DC
500
1000
1500
IF(AV) [A]
2000



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AR1107 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
170
150
130
110
90
70
50
0
PF(AV) [W]
3000
2500
2000
1500
1000
500
0
0
DISSIPATION CHARACTERISTICS
SINE WAVE
30°
60°
90°
120°
180°
500
1000
1500
IF(AV) [A]
120°
90°
180°
60°
30°
500
1000
1500
IF(AV) [A]
2000
2000



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AR1107 RECTIFIER DIODE
FINAL SPECIFICATION nov 02 - ISSUE : 05
FORWARD CHARACTERISTIC
Tj = 150 °C
4000
3500
3000
2500
2000
1500
1000
500
0
0.6
1.1 1.6 2.1
Forward Voltage [V]
2.6
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1 1
t[s]
10
100
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
16
14
12
10
8
6
4
2
0
1
SURGE CHARACTERISTIC
Tj = 150 °C
10
n° cycles
100
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by



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AR1107S36 RECTIFIER DIODE AR1107S36
Power Semiconductors
AR1107S36 pdf

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