AR1104S29 Datasheet PDF - Power Semiconductors

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AR1104S29
Power Semiconductors

Part Number AR1104S29
Description RECTIFIER DIODE
Page 4 Pages


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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
mag 02 - ISSUE : 05
Symbol Characteristic
AR1104
Repetitive voltage up to
Mean forward current
Surge current
Conditions
2900 V
1680 A
17.9 kA
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V=VRRM
175 2900
175 3000
175 50
V
V
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1800 A
1680
A
1600
A
175 17.9
kA
1602 x 1E3 A²s
25 1.30
V
175 0.85
V
175 0.260
mohm
SWITCHING
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
µs
175 µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR1104 S 29
standard specification
VRRM/100
37 °C/kW
7 °C/kW
-30 / 175
°C
11.8 / 13.2 kN
300 g



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AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
190
170
150
130
110
90
70
50
0
PF(AV) [W]
3500
3000
2500
2000
1500
1000
500
0
0
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
500
60° 90° 120°
180°
1000
1500
IF(AV) [A]
2000
DC
2500
90°
60°
120°
180°
30°
DC
500
1000
1500
2000
2500
IF(AV) [A]



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AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
190
170
150
130
110
90
70
50
0
PF(AV) [W]
3500
3000
2500
2000
1500
1000
500
0
0
DISSIPATION CHARACTERISTICS
SINE WAVE
30°
60°
90° 120°
500
1000
1500
IF(AV) [A]
2000
2500
120°
90°
60°
30°
180°
500
1000
1500
2000
2500
IF(AV) [A]



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AR1104 RECTIFIER DIODE
FINAL SPECIFICATION mag 02 - ISSUE : 05
6000
FORWARD CHARACTERISTIC
Tj = 175 °C
5000
4000
3000
2000
1000
0
0.6
1.1 1.6 2.1
Forward Voltage [V]
2.6
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1 1
t[s]
10
100
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
20
18
16
14
12
10
8
6
4
2
0
1
SURGE CHARACTERISTIC
Tj = 175 °C
10
n° cycles
100
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
Distributed by



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AR1104S29 RECTIFIER DIODE AR1104S29
Power Semiconductors
AR1104S29 pdf

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