AR1101S10 Datasheet PDF - Power Semiconductors

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AR1101S10
Power Semiconductors

Part Number AR1101S10
Description RECTIFIER DIODE
Page 4 Pages


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POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
POSEICO SPA
Via N. Lorenzi 8, 16152 Genova - ITALY
Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519
Sales Office:
Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
RECTIFIER DIODE
FINAL SPECIFICATION
ago 02 - ISSUE : 05
Symbol Characteristic
AR1101
Repetitive voltage up to
Mean forward current
Surge current
Conditions
1000 V
2250 A
28 kA
Tj
[°C]
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse voltage
V RSM
Non-repetitive peak reverse voltage
I RRM
Repetitive peak reverse current
V=VRRM
175 1000
175 1100
175 50
V
V
mA
CONDUCTING
I F (AV)
Mean forward current
I F (AV)
I FSM
I² t
V FM
V F(TO)
rF
Mean forward current
Surge forward current
I² t
Forward voltage
Threshold voltage
Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled
180° sin ,50 Hz, Tc=85°C, double side cooled
Sine wave, 10 ms
without reverse voltage
Forward current =
1800 A
2250
A
2130
A
175 28
kA
3920 x 1E3 A²s
25 1.07
V
175 0.75
V
175 0.125
mohm
SWITCHING
t rr Reverse recovery time
Q rr Reverse recovery charge
I rr Peak reverse recovery current
µs
175 µC
A
MOUNTING
R th(j-h)
Thermal impedance, DC
R th(c-h)
Thermal impedance
T j Operating junction temperature
F Mounting force
Mass
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
ORDERING INFORMATION : AR1101 S 10
standard specification
VRRM/100
37 °C/kW
7 °C/kW
-30 / 175
°C
11.8 / 13.2 kN
300 g



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AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
190
170
150
130
110
90
70
50
0
PF(AV) [W]
4000
3000
2000
DISSIPATION CHARACTERISTICS
SQUARE WAVE
30°
60° 90°
120°
180°
DC
500
1000
1500
2000
2500
3000
IF(AV) [A]
120°
90°
60°
30°
180°
DC
1000
0
0 500 1000 1500 2000 2500 3000 3500 4000
IF(AV) [A]



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AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
Th [°C]
190
170
150
130
110
90
70
50
0
DISSIPATION CHARACTERISTICS
SINE WAVE
30°
60°
90° 120°
180°
500
1000
1500
2000
2500
IF(AV) [A]
3000
PF(AV) [W]
4000
3000
2000
1000
120°
90°
60°
30°
180°
0
0
500
1000
1500
2000
2500
3000
IF(AV) [A]



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AR1101 RECTIFIER DIODE
FINAL SPECIFICATION ago 02 - ISSUE : 05
FORWARD CHARACTERISTIC
Tj = 175 °C
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
SURGE CHARACTERISTIC
Tj = 175 °C
7000
6000
5000
4000
3000
2000
1000
0
0.6
1.1
Forward Voltage [V]
1.6
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
0.001
0.01
0.1 1
t[s]
10
100
30
25
20
15
10
5
0
1
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO reserves the right to change any
data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
10
n° cycles
Distributed by
100



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AR1101S10 RECTIFIER DIODE AR1101S10
Power Semiconductors
AR1101S10 pdf

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