APM4430 Datasheet PDF - Anpec Electronics Coropration

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APM4430
Anpec Electronics Coropration

Part Number APM4430
Description N-Channel Enhancement Mode MOSFET
Page 10 Pages


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APM4430
N-Channel Enhancement Mode MOSFET
Features
30V/23A
,
RDS(ON)=4.5m(typ.)
@
V =10V
GS
RDS(ON)=7m(typ.)
@
V =5V
GS
Super High Dense Cell Design for Extremely
Low RDS(ON)
Reliable and Rugged
SO-8 Package
Applications
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems .
Ordering and Marking Information
Pin Description
54
63
72
81
SO 8
APM 4430
APM4430 K :
H a n d lin g C o d e
Temp. Range
Package Code
APM 4430
XXXXX
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 150°C
H andling C ode
TU : Tube
TR : Tape & Reel
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
VDSS Drain-Source Voltage
VGSS Gate-Source Voltage
ID Maximum Drain Current – Continuous
IDM Maximum Drain Current – Pulsed
Rating
30
±20
23
± 60
Unit
V
A
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
1
www.anpec.com.tw



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APM4430
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
PD Maximum Power Dissipation*
TA = 25°C
TA = 70°C
TJ Maximum Junction Temperature
TSTG Storage Temperature Range
RthJA Thermal Resistance – Junction to Ambient
* Surface Mounted on FR4 Board, t 10 sec.
Rating
1.6
0.625
150
-55 to 150
80
Electrical Characteristics (TA=25°C unless otherwise noted)
Unit
W
°C
°C/W
Symbol
Parameter
Test Condition
APM4430
Unit
Min. Typ. Max.
Static
BVDSS Drain-Source Breakdown
VGS=0V, ID=250µA
30
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V
VDS =24V, VGS =0V, T j = 55°C
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1
IGSS Gate Leakage Current
VGS=±20V, VDS=0V
Drain-Source On-state
RDS(ON) Resistance
VGS=10V, ID=23A
VGS=5V, ID=17A
VSD Diode Forward Voltage
IS=6A, VGS=0V
0.6
V
1 µA
5 µA
3V
±100 nA
4.5 5
m
78
1.1 V
Dynamic
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=4.5V,
ID=23A
VDD=15V, ID=1A,
VGEN=10V, RG=0.2
VGS=0V
VDS=15V
Frequency=1.0MHz
40 55 nC
17 nC
14 nC
30 45 ns
16 24 ns
100 150 ns
55 70 ns
4800
pF
900 pF
320 pF
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
2
www.anpec.com.tw



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APM4430
Typical Characteristics
Output Characteristics
80
70 VGS=5,6,7,8,9,10V
60 VGS=4.5V
50
VGS=4V
40
30
20
10 VGS=3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS-Drain-to-Source Voltage (V)
Transfer Characteristics
60
48
36
TJ=25°C
24
TJ=125°C
TJ=-55°C
12
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS-Gate-to-Source Voltage (V)
Threshold Voltage
0.4
ID=250uA
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50 -25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
On-Resistance vs. Drain Current
0.010
0.008
VGS=5V
0.006
0.004
V =10V
GS
0.002
0.000
0
10 20 30 40 50
ID-Drain Current (A)
60
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
3
www.anpec.com.tw



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APM4430
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.016
0.014
ID=23A
0.012
0.010
0.008
0.006
0.004
0.002
0 2 4 6 8 10
VGS-Gate-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
0.008
0.007
VIDGS==2130AV
0.006
0.005
0.004
0.003
0.002
0.001
0.000
-50 -25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C )
On-Resistance vs. Junction Temperature
1.8
VIDGS==2130AV
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ-Junction Temperature (°C)
Gate Charge
10
VIDDS==2135AV
8
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG-Gate Charge (nC)
Copyright ANPEC Electronics Corp.
Rev. A.1 - Oct., 2001
4
www.anpec.com.tw



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