APM4410 Datasheet PDF - Anpec Electronics Coropration

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APM4410
Anpec Electronics Coropration

Part Number APM4410
Description N-Channel Enhancement Mode MOSFET
Page 9 Pages


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APM4410
N-Channel Enhancement Mode MOSFET
Features
Pin Description
30V/11.5A, RDS(ON) = 9m(typ.) @ VGS = 10V
RDS(ON) =14.5m(typ.) @ VGS = 4.5V
High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
D
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
Ordering and Marking Information
S
N-Channel MOSFET
APM 4410
H a n d lin g C o d e
Temp. Range
Package Code
Package Code
K : SO -8
O perating Junction Tem p. R ange
C : -55 to 125°C
H andling C ode
TU : Tube
TR : Tape & Reel
APM4410 K :
APM 4410
XXXXX
XXX XX - D ate Code
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
VDSS
VGSS
ID
IDM
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Maximum Power Dissipation
TA=25°C
TA=100°C
Rating
30
±20
11.5
50
2.5
1.0
Unit
V
A
W
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
1
www.anpec.com.tw



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APM4410
Thermal Characteristics
Symbol
TJ
TSTG
RθJA
Parameter
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance - Junction to Ambient
Rating
150
-55 to 150
50
Unit
°C
°C/W
Electrical Characteristics (TA=25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Static
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250µA
IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
IGSS Gate Leakage Current
VGS=±20V, VDS =0V
RDS(ON)
Drain-Source On-state Resistance b VGS=10V, ID=11.5A
VGS=4.5V, ID=5A
VSD Diode Forward Voltage b
ISD=2.3A, VGS=0V
Dynamica
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
Ciss
Coss
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=10V,
ID=10A
VDD=15V, RL=15,
ID=1A , VGEN=10V,
RG=6,
VGS=0V, VDS=25V
Frequency = 1.0MHZ
APM4410
Min. Typa. Max.
Unit
30 V
1 uA
1 3V
±100 nA
9 11
14.5 16 m
0.6 1.2 V
45
10
8
16
24
78
42
2000
400
220
60
25
35
110
80
nC
ns
pF
Notes
a : Guaranteed by design, not subject to production testing
b : Pulse test ; pulse width 300µs, duty cycle 2%
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
2
www.anpec.com.tw



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APM4410
Typical Characteristics
Output Characteristics
50
VGS=5,6,7,8,9,10V
40
VGS=4V
30
20
10
VGS=3V
0
0 2 4 6 8 10
VDS-Drain-to-Source Voltage (V)
Transfer Characteristics
50
40
30
20 TJ=25°C
10 TJ=125°C
TJ=-55°C
0
012345
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.4
IDS=250µA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
On-Resistance vs. Drain Current
0.020
0.016
0.012
0.008
VGS=4.5V
VGS=10V
0.004
0.000
0
5 10 15 20 25 30 35
IDS-Drain Current (A)
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
3
www.anpec.com.tw



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APM4410
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.10
IDS=11.5A
0.08
0.06
0.04
0.02
0.000
2468
Gate Voltage (V)
10
On-Resistaence vs. Junction Temperature
2.00
1.75
IVDSG=S=111.05VA
1.50
1.25
1.00
0.75
0.50
0.25
0.00-50 -25 0 25 50 75 100 125 150
Tj-Junction Temperature (°C)
10
IVDSD=S=111.55VA
8
Gate Charge
6
4
2
00 9 18 27 36 45
QG-Total Gate Charge (nC)
Capacitance Characteristics
3000
2500
2000
Ciss
1500
1000
Coss
500
Crss
0
0 5 10 15 20 25 30
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp.
Rev. A.5 - July., 2002
4
www.anpec.com.tw



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