APM4050APU Datasheet PDF - Anpec


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APM4050APU
Anpec

Part Number APM4050APU
Description P-Channel Enhancement Mode MOSFET
Page 10 Pages

APM4050APU datasheet pdf
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APM4050APU
Features
-40V/-25A,
RDS(ON)=33m(typ.) @ VGS=-10V
RDS(ON)=47m(typ.) @ VGS=-4.5V
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Applications
Inverter application in LCD Monitor/TV
P-Channel Enhancement Mode MOSFET
Pin Description
GD
S
Top View of TO-252
S
G
D
P-Channel MOSFET
Ordering and Marking Information
APM4050AP
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device
APM4050AP U: APM4050A
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Sep., 2006
1
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APM4050APU
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
TC=25°C
Mounted on Large Heat Sink
IDP
300µs Pulse Drain Current Tested
TC=25°C
TC=100°C
ID Continuous Drain Current
TC=25°C
TC=100°C
PD Maximum Power Dissipation
TC=25°C
TC=100°C
RθJC Thermal Resistance-Junction to Case
Mounted on PCB of 1in2 Pad Area
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Mounted on PCB of Minimum Footprint
IDP
300µs Pulse Drain Current Tested
TA=25°C
TA=100°C
ID Continuous Drain Current
TA=25°C
TA=100°C
PD Maximum Power Dissipation
TA=25°C
TA=100°C
RθJA Thermal Resistance-Junction to Ambient
Rating
-40
±20
150
-55 to 150
-10
-50
-40
-25
-16
50
20
2.5
-22
-14
-5.5
-3.5
2.5
1
50
-18
-12
-4.5
-3
1.6
0.6
75
Unit
V
°C
°C
A
A
A
W
°C/W
A
A
W
°C/W
A
A
W
°C/W
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Sep., 2006
2
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APM4050APU
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=-250µA
VDS=-32V, VGS=0V
TJ=85°C
VDS=VGS, IDS=-250µA
VGS=±16V, VDS=0V
VGS=-10V, IDS=-12A
VGS=-4.5V, IDS=-5A
-40
-1.3
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=-10A, VGS=0V
IDS=-12A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
VDD=-20V, RL=20,
IDS=-1A, VGEN=-10V,
RG=6
VDS=-20V, VGS=-10V,
IDS=-12A
Notes:
a : Pulse test ; pulse width300ms, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
-1.8
33
47
-0.8
15
7
9.5
1080
120
70
11
9
50
27
18
2.5
4.5
-1
-30
-2.5
±10
45
68
-1.1
21
17
91
50
25
Unit
V
µA
V
µA
m
V
ns
nC
pF
ns
nC
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Sep., 2006
3
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APM4050APU
Typical Characteristics
Power Dissipation
60
50
40
30
20
10
T =25oC
C
0
0 20 40 60 80 100 120 140 160 180
Tj - Junction Temperature (°C)
Safe Operation Area
100
1ms
10 10ms
100ms
1s
1 DC
T =25OC
0.1 C
0.01 0.1 1 10 100
VDS - Drain - Source Voltage (V)
Drain Current
30
25
20
15
10
5
T =25oC,V =-10V
CG
0
0 20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Thermal Transient Impedance
2
1 Duty = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
Single Pulse
0.01
1E-4 1E-3 0.01
Mounted on 1in2 pad
R :50oC/W
θJA
0.1 1 10 100
Square Wave Pulse Duration (sec)
Copyright © ANPEC Electronics Corp.
Rev. A.1 - Sep., 2006
4
www.anpec.com.tw




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