AP9985GM-HF-3 Datasheet PDF - Advanced Power Electronics

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AP9985GM-HF-3
Advanced Power Electronics

Part Number AP9985GM-HF-3
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 5 Pages


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Advanced Power
Electronics Corp.
AP9985GM-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
D
Low On-Resistance
BV DSS
40V
Fast Switching Performance
RDS(ON)
15m
RoHS-compliant, halogen-free
G
ID 10A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP9985GM-HF-3 is in the SO-8 package, which is widely used
for commercial and industrial surface-mount applications, and is well
suited for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8 (M)
G
SS
S
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TA=25°C
ID at TA= 70°C
IDM
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Rating
40
±20
10
8
48
2.5
0.02
-55 to 150
-55 to 150
Value
50
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
Ordering Information
AP9985GM-HF-3TR : in RoHS-compliant halogen-free SO-8, shipped on tape and reel (3000 pcs/reel)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200811132-3 1/5



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AP9985GM-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=10A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=10A
Drain-Source Leakage Current
VDS=40V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=32V ,VGS=0V
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS= ± 20V
ID=10A
VDS=20V
VGS=4.5V
VDS=20V
Rise Time
Turn-off Delay Time
ID=1A
RG=3.3, VGS=10V
Fall Time
RD=20
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25°C, IS=2.3A, VGS=0V
Min. Typ. Max. Units
40 - - V
- 0.032 - V/°C
- - 15 m
- - 25 m
1 - 3V
- 35 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 14.7 - nC
- 7.1 - nC
- 6.8 - nC
- 11.5 - ns
- 6.3 - ns
- 28.2 - ns
- 12.6 -
- 1725 -
- 235 -
- 145 -
ns
pF
pF
pF
Min. Typ. Max. Units
- - 1.92 A
- - 1.3 V
Notes:
1.Pulse width limited by maximum junction temperature.
2.Pulse test - pulse width <300µs , duty cycle <2%
3.Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
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Typical Electrical Characteristics
50
T A =25 o C
10V
6.0V
40 5.0V
4.5V
30
20 V G = 4.0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I D =10A
60 T A =25 ° C
50
40
30
20
10
2468
V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance vs. Gate Voltage
10
8
6
T j =150 o C
4
T j =25 o C
2
0
0 0.2 0.4 0.6 0.8 1 1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP9985GM-HF-3
50
T A = 150 o C
40
30
20
10V
6.0V
5.0V
4.5V
V G = 4 .0 V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D =10A
V G =10V
1.6
1.2
0.8
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2.8
2.4
2.0
1.6
1.2
0.8
-50
-25 0 25 50 75 100 125
T j , Junction Temperature (oC)
150
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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Electronics Corp.
Typical Electrical Characteristics (cont.)
AP9985GM-HF-3
12
I D =10A
10
V DS =12V
8
V DS =16V
V DS =20V
6
2400
2000
1600
1200
f=1.0MHz
C iss
4 800
2
0
0 4 8 12 16 20 24
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
400
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
100us
10
1ms
1 10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
0.01
0.01
0.1
1
DC
10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=125°C/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Fig 12. Gate Charge Waveform
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AP9985GM-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP9985GM-HF-3
Advanced Power Electronics
AP9985GM-HF-3 pdf

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