AP9985GM Datasheet PDF - Advanced Power Electronics

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AP9985GM
Advanced Power Electronics

Part Number AP9985GM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Page 7 Pages


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Advanced Power
Electronics Corp.
AP9985GM
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-Resistance
Fast Switching Speed
Surface Mount Package
Description
D
D
D
D
SO-8
G
S
S
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
40V
15mΩ
10A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
40
± 20
10
8
48
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Value
50
Unit
/W
Data and specifications subject to change without notice
200120031



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AP9985GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=10A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
VDS=10V, ID=10A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=10A
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
Turn-off Delay Time
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
RD=20Ω
Input Capacitance
VGS=0V
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
f=1.0MHz
40 - - V
- 0.032 - V/
- - 15 mΩ
- - 25 mΩ
1 - 3V
- 35 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 14.7 -
- 7.1 -
- 6.8 -
- 11.5 -
nC
nC
nC
ns
- 6.3 - ns
- 28.2 - ns
- 12.6 -
- 1725 -
- 235 -
- 145 -
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=2.3A, VGS=0V
Min. Typ. Max. Units
- - 1.92 A
- - 1.3 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad.



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AP9985GM
50
T C =25 o C
10V
6.0V
5.0V
40
4.5V
30
20
V GS =4.0V
10
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
45
T C =150 o C
10V
6.0V
5.0V
4.5V
30
V GS =4.0V
15
0
01234
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
80
I D =10A
T C =25
60
40
20
0
2 4 6 8 10 12
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
2
I D =10A
V GS =10V
1.4
0.8
0.2
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature



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AP9985GM
12
10
8
6
4
2
0
25 50 75 100 125 150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
3
2
1
0
0 50 100 150
T c , Case Temperature ( o C)
Fig 6. Typical Power Dissipation
100
10
1
0.1
T C =25 o C
Single Pulse
0.01
0.1
1
V DS (V)
10
100us
1ms
10ms
100ms
1s
10s
DC
100
Fig 7. Maximum Safe Operating Area
1
Duty Factor = 0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single Pulse
PDM
t
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 8. Effective Transient Thermal Impedance



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